Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 40

ZVN2120ASTOB

bahagian bahagian: 9780

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVNL120ASTOA

bahagian bahagian: 5991

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 5V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVP1320A

bahagian bahagian: 9856

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZVN3306FTC

bahagian bahagian: 9843

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVP1320ASTZ

bahagian bahagian: 9873

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZXMN2A01E6TC

bahagian bahagian: 9849

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 4A, 4.5V,

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Diodes Incorporated

ZVP0120ASTOB

bahagian bahagian: 9836

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 32 Ohm @ 125mA, 10V,

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Diodes Incorporated

ZVN3320ASTOB

bahagian bahagian: 9826

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZVN0124ASTOB

bahagian bahagian: 6076

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVN4525GTC

bahagian bahagian: 9875

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVN4306AVSTZ

bahagian bahagian: 9822

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 330 mOhm @ 3A, 10V,

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Diodes Incorporated

ZVP4424GTC

bahagian bahagian: 9832

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 480mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 Ohm @ 200mA, 10V,

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Diodes Incorporated

ZVP1320ASTOB

bahagian bahagian: 6070

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZVP3306ASTZ

bahagian bahagian: 9812

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 14 Ohm @ 200mA, 10V,

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Diodes Incorporated

ZXMN2A02X8TC

bahagian bahagian: 5985

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 11A, 4.5V,

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Diodes Incorporated

VN10LFTC

bahagian bahagian: 9787

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVP3310ASTOA

bahagian bahagian: 5987

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 150mA, 10V,

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Diodes Incorporated

ZXMN6A08E6TC

bahagian bahagian: 9889

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 4.8A, 10V,

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Diodes Incorporated

ZXM64N03XTC

bahagian bahagian: 9824

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.7A, 10V,

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Diodes Incorporated

ZVN0124ZSTOB

bahagian bahagian: 9843

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVP2106ASTOA

bahagian bahagian: 9836

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVN2535ASTZ

bahagian bahagian: 9837

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 350V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 35 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZVNL120CSTOB

bahagian bahagian: 9821

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 5V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 250mA, 5V,

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Diodes Incorporated

ZVN3310A

bahagian bahagian: 85236

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVN3310ASTOA

bahagian bahagian: 9838

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVP0545ASTOA

bahagian bahagian: 9816

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 150 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZVP3310ASTZ

bahagian bahagian: 9830

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 150mA, 10V,

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Diodes Incorporated

ZXM66P02N8TC

bahagian bahagian: 6016

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3.2A, 4.5V,

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Diodes Incorporated

ZVN0540ASTOA

bahagian bahagian: 9856

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 50 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZVN4206ASTOB

bahagian bahagian: 6003

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 1.5A, 10V,

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Diodes Incorporated

ZVN2110GTC

bahagian bahagian: 9873

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Diodes Incorporated

ZVN0545ASTOA

bahagian bahagian: 9841

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 50 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZXMN10B08E6TC

bahagian bahagian: 9861

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.3V, 10V, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 1.6A, 10V,

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Diodes Incorporated

ZXMN2A01FTC

bahagian bahagian: 9864

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 4A, 4.5V,

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Diodes Incorporated

ZVP2120ASTOB

bahagian bahagian: 9833

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 150mA, 10V,

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Diodes Incorporated

ZVNL120CSTZ

bahagian bahagian: 5997

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 5V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 250mA, 5V,

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