Transistor - Bipolar (BJT) - Bujang | Produk Semikonduktor Diskrit | 40

MMBTA06-7

bahagian bahagian: 5130

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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Diodes Incorporated

FCX1147ATA

bahagian bahagian: 47382

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 50mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V,

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Diodes Incorporated

ZTX1048ASTOB

bahagian bahagian: 5218

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 17.5V, Ketepuan Vce (Maks) @ Ib, Ic: 245mV @ 20mA, 4A, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V,

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Diodes Incorporated

FMMT734TA

bahagian bahagian: 133098

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.05V @ 5mA, 1A, Semasa - Potongan Pemungut (Maksimum): 200nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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Diodes Incorporated

MMBT2907AT-7-F

bahagian bahagian: 197856

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Diodes Incorporated

ZTX717STOB

bahagian bahagian: 6548

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V,

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Diodes Incorporated

FMMT619TA

bahagian bahagian: 160640

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 220mV @ 50mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V,

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Diodes Incorporated

FMMT722TA

bahagian bahagian: 101566

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 70V, Ketepuan Vce (Maks) @ Ib, Ic: 260mV @ 200mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V,

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Diodes Incorporated

ZXTP2025FTA

bahagian bahagian: 160506

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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Diodes Incorporated

ZX5T2E6TA

bahagian bahagian: 148810

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 130mV @ 350mA, 3.5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V,

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Diodes Incorporated

DN350T05-7

bahagian bahagian: 106079

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V,

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Diodes Incorporated

ZTX557STZ

bahagian bahagian: 5190

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V,

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Diodes Incorporated

DCP51-16-13

bahagian bahagian: 4845

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V,

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Diodes Incorporated

FMMT618TA

bahagian bahagian: 186279

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 50mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V,

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