Transistor - FET, MOSFET - Bujang

2N7639-GA

bahagian bahagian: 318

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc) (155°C), Rds On (Maks) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

bahagian bahagian: 339

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc) (158°C), Rds On (Maks) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

bahagian bahagian: 369

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc) (165°C), Rds On (Maks) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

bahagian bahagian: 431

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Maks) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

bahagian bahagian: 376

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Maks) @ Id, Vgs: 415 mOhm @ 4A,

2N7640-GA

bahagian bahagian: 339

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc) (155°C), Rds On (Maks) @ Id, Vgs: 105 mOhm @ 16A,

GA10SICP12-263

bahagian bahagian: 1777

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Rds On (Maks) @ Id, Vgs: 100 mOhm @ 10A,

GA50JT06-258

bahagian bahagian: 161

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT03-46

bahagian bahagian: 1073

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Rds On (Maks) @ Id, Vgs: 240 mOhm @ 5A,

GA50JT12-247

bahagian bahagian: 733

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT01-46

bahagian bahagian: 1236

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Rds On (Maks) @ Id, Vgs: 240 mOhm @ 5A,

GA04JT17-247

bahagian bahagian: 2389

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc) (95°C), Rds On (Maks) @ Id, Vgs: 480 mOhm @ 4A,

GA08JT17-247

bahagian bahagian: 1402

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc) (90°C), Rds On (Maks) @ Id, Vgs: 250 mOhm @ 8A,

GA20JT12-263

bahagian bahagian: 1840

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Tc), Rds On (Maks) @ Id, Vgs: 60 mOhm @ 20A,

GA10JT12-263

bahagian bahagian: 3360

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Rds On (Maks) @ Id, Vgs: 120 mOhm @ 10A,

GA05JT12-263

bahagian bahagian: 5916

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc),

GA50JT12-263

bahagian bahagian: 816

GA100JT17-227

bahagian bahagian: 253

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 100A,

GA100JT12-227

bahagian bahagian: 460

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 100A,

GA20JT12-247

bahagian bahagian: 2717

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Rds On (Maks) @ Id, Vgs: 70 mOhm @ 20A,

GA16JT17-247

bahagian bahagian: 925

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc) (90°C), Rds On (Maks) @ Id, Vgs: 110 mOhm @ 16A,

GA10JT12-247

bahagian bahagian: 3338

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Rds On (Maks) @ Id, Vgs: 140 mOhm @ 10A,

GA03JT12-247

bahagian bahagian: 7277

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Tc) (95°C), Rds On (Maks) @ Id, Vgs: 460 mOhm @ 3A,

GA20SICP12-247

bahagian bahagian: 1734

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Tc), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 20A,

GA50JT17-247

bahagian bahagian: 438

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT12-247

bahagian bahagian: 10854

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Rds On (Maks) @ Id, Vgs: 280 mOhm @ 5A,

GA06JT12-247

bahagian bahagian: 6819

Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc) (90°C), Rds On (Maks) @ Id, Vgs: 220 mOhm @ 6A,