Transistor - FET, MOSFET - Bujang

AOT1N60

bahagian bahagian: 107755

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9 Ohm @ 650mA, 10V,

AOT20S60L

bahagian bahagian: 22197

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 199 mOhm @ 10A, 10V,

AOT2500L

bahagian bahagian: 19106

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A (Ta), 152A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 20A, 10V,

AOT460_002

bahagian bahagian: 2383

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 30A, 10V,

AON7426_101

bahagian bahagian: 2447

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 18A, 10V,

AOTF8N65_002

bahagian bahagian: 2416

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF8N50_003

bahagian bahagian: 6308

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF8N50_002

bahagian bahagian: 2379

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF7N60_002

bahagian bahagian: 2412

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF4N60_002

bahagian bahagian: 2413

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF4N90_002

bahagian bahagian: 2360

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF22N50_001

bahagian bahagian: 2377

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF20S60_900

bahagian bahagian: 2422

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF20S60_001

bahagian bahagian: 6258

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF18N65_001

bahagian bahagian: 2409

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF16N50_001

bahagian bahagian: 2425

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF14N50_002

bahagian bahagian: 2433

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF12N50_007

bahagian bahagian: 2390

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF12N50_001

bahagian bahagian: 2400

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOTF11S60_900

bahagian bahagian: 2420

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOD3N50_003

bahagian bahagian: 2362

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1.5A, 10V,

AOD2N100M

bahagian bahagian: 2357

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide),

AOD3N50_002

bahagian bahagian: 2379

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1.5A, 10V,

AO6405_102

bahagian bahagian: 6321

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 5A, 10V,

AO6405_101

bahagian bahagian: 2389

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 5A, 10V,

AO6402A_201

bahagian bahagian: 2354

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.5A, 10V,

AO3416L

bahagian bahagian: 2332

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V,

AON7410L_105

bahagian bahagian: 2334

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V,

AON7430L

bahagian bahagian: 2351

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 20A, 10V,

AON7410L

bahagian bahagian: 2369

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V,

AON7408L

bahagian bahagian: 2366

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 9A, 10V,

AON7406L

bahagian bahagian: 2402

AON7403L

bahagian bahagian: 2348

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8A, 10V,

AON6452L

bahagian bahagian: 5641

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), 26A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 20A, 10V,

AON7401L

bahagian bahagian: 5685

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9A, 20V,

AON6448L_001

bahagian bahagian: 2394

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 65A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7V, 10V, Rds On (Maks) @ Id, Vgs: 9.6 mOhm @ 10A, 10V,