Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 1

HTNFET-D

bahagian bahagian: 199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 100mA, 5V,

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Honeywell Aerospace

HTNFET-T

bahagian bahagian: 199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 100mA, 5V,

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Honeywell Aerospace

HTNFET-TC

bahagian bahagian: 211

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 100mA, 5V,

Senarai harapan

Honeywell Aerospace

HTNFET-DC

bahagian bahagian: 199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 100mA, 5V,

Senarai harapan