Ingatan | Litar Bersepadu (IC) | 100

71V30S55TFG

bahagian bahagian: 7817

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 8Kb (1K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V3557S75PFGI

bahagian bahagian: 4739

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous ZBT, Saiz Ingatan: 4.5Mb (128K x 36),

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IDT, Integrated Device Technology Inc

71V3557S75PFGI8

bahagian bahagian: 4708

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous ZBT, Saiz Ingatan: 4.5Mb (128K x 36),

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IDT, Integrated Device Technology Inc

71V3557S75BGI

bahagian bahagian: 4601

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous ZBT, Saiz Ingatan: 4.5Mb (128K x 36),

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IDT, Integrated Device Technology Inc

71V35761SA200BQG

bahagian bahagian: 7831

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 4.5Mb (128K x 36), Kekerapan Jam: 200MHz,

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IDT, Integrated Device Technology Inc

71V321S55TF8

bahagian bahagian: 10049

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321S55TF

bahagian bahagian: 8023

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321S55PF8

bahagian bahagian: 9750

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321S55PF

bahagian bahagian: 8034

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321S55J8

bahagian bahagian: 10747

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321S55J

bahagian bahagian: 9268

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321S35TF8

bahagian bahagian: 7441

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321S35PF

bahagian bahagian: 5793

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321S35TF

bahagian bahagian: 5722

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321S35PF8

bahagian bahagian: 7192

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321S35J8

bahagian bahagian: 8200

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321S35J

bahagian bahagian: 6848

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321S25TF8

bahagian bahagian: 6571

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321S25PF8

bahagian bahagian: 6264

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321S25TF

bahagian bahagian: 5014

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321S25J8

bahagian bahagian: 7282

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321S25PF

bahagian bahagian: 5017

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321S25J

bahagian bahagian: 6053

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321L55TF8

bahagian bahagian: 9116

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321L55TF

bahagian bahagian: 7340

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321L55PF8

bahagian bahagian: 8897

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321L55PF

bahagian bahagian: 7228

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321L55J8

bahagian bahagian: 9750

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

71V321L35TF8

bahagian bahagian: 6773

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321L35PF8

bahagian bahagian: 6564

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321L35TF

bahagian bahagian: 5208

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321L35PF

bahagian bahagian: 5250

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321L35J8

bahagian bahagian: 7475

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

71V321L25TF8

bahagian bahagian: 5705

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321L25TFI

bahagian bahagian: 4064

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

71V321L25PFI

bahagian bahagian: 4210

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 16Kb (2K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

Senarai harapan