Ingatan | Litar Bersepadu (IC) | 100

70V07S55J8

bahagian bahagian: 2966

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

70V07S55PF8

bahagian bahagian: 3093

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

70V07S35PF

bahagian bahagian: 2249

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07S35PF8

bahagian bahagian: 2871

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07S55J

bahagian bahagian: 2312

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

70V07S35J

bahagian bahagian: 2173

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07S35J8

bahagian bahagian: 2738

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07S25PF

bahagian bahagian: 2245

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07S25J8

bahagian bahagian: 2754

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07S25PF8

bahagian bahagian: 2813

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07L55PF8

bahagian bahagian: 2952

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

70V07L55PF

bahagian bahagian: 2366

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

70V07L55J

bahagian bahagian: 2226

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V07L55J8

bahagian bahagian: 2751

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V07L35J8

bahagian bahagian: 2578

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07L35PF8

bahagian bahagian: 2685

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07L35PF

bahagian bahagian: 2175

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07L35J

bahagian bahagian: 2121

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V07L25PFI8

bahagian bahagian: 2434

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07L25PF8

bahagian bahagian: 2680

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07L25PFI

bahagian bahagian: 1978

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07L25PF

bahagian bahagian: 2213

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07L25JI

bahagian bahagian: 1936

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V07L25J8

bahagian bahagian: 2589

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

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IDT, Integrated Device Technology Inc

70V06S55PF8

bahagian bahagian: 3929

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V07L25J

bahagian bahagian: 2084

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S55PF

bahagian bahagian: 3108

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S55J

bahagian bahagian: 3028

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S55J8

bahagian bahagian: 3648

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

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IDT, Integrated Device Technology Inc

70V06S35PF8

bahagian bahagian: 3663

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S35PF

bahagian bahagian: 2892

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S35J8

bahagian bahagian: 3412

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S35J

bahagian bahagian: 2763

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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IDT, Integrated Device Technology Inc

70V06S25PF8

bahagian bahagian: 3650

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S25J

bahagian bahagian: 2775

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

Senarai harapan

IDT, Integrated Device Technology Inc

70V06S25PF

bahagian bahagian: 2835

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 128Kb (16K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

Senarai harapan