Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

IXFT20N80P

bahagian bahagian: 9745

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 520 mOhm @ 10A, 10V,

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IXFN300N10P

bahagian bahagian: 2221

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 295A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 50A, 10V,

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IXFT150N17T2

bahagian bahagian: 188

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 175V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 75A, 10V,

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IXFN44N80P

bahagian bahagian: 3265

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 500mA, 10V,

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IXFX220N17T2

bahagian bahagian: 7438

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 170V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 60A, 10V,

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IXFX44N80Q3

bahagian bahagian: 2627

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 22A, 10V,

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IXFN50N120SK

bahagian bahagian: 224

Jenis FET: N-Channel, Teknologi: SiC (Silicon Carbide Junction Transistor), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 40A, 20V,

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IXFT94N30T

bahagian bahagian: 5577

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 94A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 47A, 10V,

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IXTY32P05T

bahagian bahagian: 30661

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 16A, 10V,

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IXTQ50N25T

bahagian bahagian: 18637

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 25A, 10V,

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IXFX250N10P

bahagian bahagian: 4554

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 50A, 10V,

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IXFP24N60X

bahagian bahagian: 17826

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 12A, 10V,

Senarai harapan

IXTY1N100P

bahagian bahagian: 42459

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 500mA, 10V,

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IXFP8N85XM

bahagian bahagian: 159

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 850V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 850 mOhm @ 4A, 10V,

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IXTP12N50P

bahagian bahagian: 27110

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 6A, 10V,

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IXTH2R4N120P

bahagian bahagian: 12347

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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IXTA130N065T2

bahagian bahagian: 26979

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 65V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 130A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 50A, 10V,

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IXTH140N075L2

bahagian bahagian: 242

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 70A, 10V,

Senarai harapan

IXTA1N200P3HV

bahagian bahagian: 3799

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 2000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 40 Ohm @ 500mA, 10V,

Senarai harapan

IXTP230N04T4

bahagian bahagian: 158

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.9 mOhm @ 115A, 10V,

Senarai harapan

IXTT30N60P

bahagian bahagian: 8627

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 15A, 10V,

Senarai harapan

IXTR102N65X2

bahagian bahagian: 4475

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 51A, 10V,

Senarai harapan

IXFP76N15T2

bahagian bahagian: 26478

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 76A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 38A, 10V,

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IXTA14N60P

bahagian bahagian: 23819

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 7A, 10V,

Senarai harapan

IXFK170N10P

bahagian bahagian: 7956

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 500mA, 10V,

Senarai harapan

IXFT24N90P

bahagian bahagian: 6765

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 12A, 10V,

Senarai harapan

IXFH44N50Q3

bahagian bahagian: 5367

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 22A, 10V,

Senarai harapan

IXTP10P15T

bahagian bahagian: 36993

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 5A, 10V,

Senarai harapan

IXFK120N30T

bahagian bahagian: 6714

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 60A, 10V,

Senarai harapan

IXTK550N055T2

bahagian bahagian: 4499

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 550A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 100A, 10V,

Senarai harapan

IXTY48P05T

bahagian bahagian: 29638

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 24A, 10V,

Senarai harapan

IXTA90N075T2

bahagian bahagian: 30699

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

Senarai harapan

IXTQ18N60P

bahagian bahagian: 18627

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 9A, 10V,

Senarai harapan

IXFA22N60P3

bahagian bahagian: 172

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 11A, 10V,

Senarai harapan

IXTT1N300P3HV

bahagian bahagian: 2296

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 3000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 50 Ohm @ 500mA, 10V,

Senarai harapan

IXTK20N150

bahagian bahagian: 2075

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 10A, 10V,

Senarai harapan

2148

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