Transistor - FET, MOSFET - Bujang

IXFK72N20

bahagian bahagian: 2206

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 36A, 10V,

IXFX30N50

bahagian bahagian: 2220

IXFE180N20

bahagian bahagian: 1995

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 158A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 500mA, 10V,

IXFM15N60

bahagian bahagian: 6303

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 7.5A, 10V,

IXFD40N30Q-72

bahagian bahagian: 2265

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V,

IXTM1316

bahagian bahagian: 2351

IXTH21N50Q

bahagian bahagian: 2247

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 10.5A, 10V,

IXFX80N15Q

bahagian bahagian: 2236

IXFH32N48Q

bahagian bahagian: 2208

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 480V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 15A, 10V,

IXTM11P50

bahagian bahagian: 2327

IXFT40N30Q TR

bahagian bahagian: 6309

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 20A, 10V,

IXTM21N50L

bahagian bahagian: 2302

IXTM15N60

bahagian bahagian: 2333

IXFM11N80

bahagian bahagian: 2336

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 950 mOhm @ 5.5A, 10V,

IXFN30N110P

bahagian bahagian: 1890

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 15A, 10V,

IXFD15N100-8X

bahagian bahagian: 2189

IXTM1630

bahagian bahagian: 2322

IXFJ15N100Q

bahagian bahagian: 2221

IXFH1837

bahagian bahagian: 2271

IXTY1R4N60P TRL

bahagian bahagian: 2308

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9 Ohm @ 700mA, 10V,

IXTM50N20

bahagian bahagian: 2338

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 25A, 10V,

IXTD4N80P-3J

bahagian bahagian: 2322

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.4 Ohm @ 1.8A, 10V,

T-TD1R4N60P 11

bahagian bahagian: 2368

IXFN34N100

bahagian bahagian: 1652

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 500mA, 10V,

IXFM1766

bahagian bahagian: 2282

IXTM24N50L

bahagian bahagian: 2307

IXTK40P50P

bahagian bahagian: 4122

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 20A, 10V,

IXFN72N55Q2

bahagian bahagian: 1985

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 500mA, 10V,

IXTP76P10T

bahagian bahagian: 13460

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 76A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 500mA, 10V,

IXFT74N20Q

bahagian bahagian: 2228

IXFH14N100Q

bahagian bahagian: 2253

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 7A, 10V,

IXFB30N120Q2

bahagian bahagian: 1609

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc),

IXFD80N10Q-8XQ

bahagian bahagian: 2255

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V,

IXFN80N48

bahagian bahagian: 1727

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 480V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 500mA, 10V,

IXFM1627

bahagian bahagian: 2371

IXTM5N100

bahagian bahagian: 2291

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V,