Transistor - FET, MOSFET - Susunan

GWM180-004X2-SMDSAM

bahagian bahagian: 3093

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

VMM1500-0075P

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1500A, Rds On (Maks) @ Id, Vgs: 0.8 mOhm @ 1200A, 10V, Vgs (th) (Maks) @ Id: 4V @ 10mA,

GWM120-0075X1-SLSAM

bahagian bahagian: 3355

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

VMM90-09P

bahagian bahagian: 480

VKM60-01P1

bahagian bahagian: 1092

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 4mA,

GMM3X180-004X2-SMD

bahagian bahagian: 3178

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

FMP36-015P

bahagian bahagian: 4846

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, 22A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 31A, 10V, Vgs (th) (Maks) @ Id: 5.5V @ 250µA,

GMM3X100-01X1-SMDSAM

bahagian bahagian: 3134

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

MMIX2F60N50P3

bahagian bahagian: 257

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 110 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 5V @ 4mA,

FMM110-015X2F

bahagian bahagian: 4783

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 55A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

GMM3X60-015X2-SMDSAM

bahagian bahagian: 3115

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 38A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

GWM100-01X1-SMDSAM

bahagian bahagian: 2800

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

GMM3X180-004X2-SMDSAM

bahagian bahagian: 3145

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

MCB40P1200LB

bahagian bahagian: 230

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 58A,

GMM3X100-01X1-SMD

bahagian bahagian: 3671

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

VHM40-06P1

bahagian bahagian: 1544

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 5.5V @ 3mA,

GMM3X120-0075X2-SMDSAM

bahagian bahagian: 3120

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A, Vgs (th) (Maks) @ Id: 4V @ 1mA,

VBH40-05B

bahagian bahagian: 905

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A, Rds On (Maks) @ Id, Vgs: 116 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

GWM180-004X2-SL

bahagian bahagian: 3066

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

GWM120-0075X1-SMDSAM

bahagian bahagian: 2788

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

IXTL2X240N055T

bahagian bahagian: 2780

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140A, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

GWM220-004P3-SMD

bahagian bahagian: 2843

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4V @ 1mA,

IXTL2X180N10T

bahagian bahagian: 8037

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A, Rds On (Maks) @ Id, Vgs: 7.4 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

FMM150-0075P

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 120A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

GWM120-0075X1-SMD

bahagian bahagian: 2800

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

GWM160-0055X1-SMDSAM

bahagian bahagian: 2777

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

GWM220-004P3-SMD SAM

bahagian bahagian: 2762

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4V @ 1mA,

VWM350-0075P

bahagian bahagian: 2759

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 340A, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 250A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2mA,

IXTL2X220N075T

bahagian bahagian: 2763

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

GWM220-004P3-SL

bahagian bahagian: 2796

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4V @ 1mA,

VWM200-01P

bahagian bahagian: 2691

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 210A, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2mA,

GWM160-0055X1-SLSAM

bahagian bahagian: 2774

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

IXTL2X200N085T

bahagian bahagian: 2753

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 85V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 112A, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

GWM100-01X1-SL

bahagian bahagian: 2846

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

GWM70-01P2

bahagian bahagian: 2692

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

GWM100-01X1-SMD

bahagian bahagian: 2825

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,