Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 1

SS275TI12205

bahagian bahagian: 747

Konfigurasi Diod: 3 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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IXYS-RF

SS150TC60110

bahagian bahagian: 709

Konfigurasi Diod: 3 Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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IXYS-RF

SS150TA60110

bahagian bahagian: 733

Konfigurasi Diod: 3 Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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IXYS-RF

SS275TA12205

bahagian bahagian: 711

Konfigurasi Diod: 3 Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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IXYS-RF

SS275TC12205

bahagian bahagian: 751

Konfigurasi Diod: 3 Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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IXYS-RF

SS150TI60110

bahagian bahagian: 671

Konfigurasi Diod: 3 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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