Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

Nexperia USA Inc.

PMZB550UNEYL

bahagian bahagian: 180213

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 590mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V,

Senarai harapan

Nexperia USA Inc.

PSMN041-80YLX

bahagian bahagian: 126580

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

PMV50UPE,215

bahagian bahagian: 147116

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 66 mOhm @ 3.2A, 4.5V,

Senarai harapan

Nexperia USA Inc.

NX3008PBK,215

bahagian bahagian: 139409

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMZ290UNE2YL

bahagian bahagian: 130425

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 320 mOhm @ 1.2A, 4.5V,

Senarai harapan

PSMN4R0-30YL,115

Nexperia USA Inc.

PSMN4R0-30YL,115

bahagian bahagian: 133524

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

PMV48XPAR

bahagian bahagian: 125231

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V,

Senarai harapan

PSMN020-100YS,115

Nexperia USA Inc.

PSMN020-100YS,115

bahagian bahagian: 189766

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20.5 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

PMPB33XP,115

bahagian bahagian: 189292

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 5.5A, 4.5V,

Senarai harapan

PSMN2R8-40PS,127

Nexperia USA Inc.

PSMN2R8-40PS,127

bahagian bahagian: 38801

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

PMV33UPE,215

bahagian bahagian: 199109

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 3A, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMZB290UNE,315

bahagian bahagian: 111836

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V,

Senarai harapan

PSMN4R3-100PS,127

Nexperia USA Inc.

PSMN4R3-100PS,127

bahagian bahagian: 23900

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

PMV30XPEAR

bahagian bahagian: 108272

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 3A, 4.5V,

Senarai harapan

PSMN5R0-80PS,127

Nexperia USA Inc.

PSMN5R0-80PS,127

bahagian bahagian: 38384

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 15A, 10V,

Senarai harapan

PSMN3R3-40YS,115

Nexperia USA Inc.

PSMN3R3-40YS,115

bahagian bahagian: 164155

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

PML260SN,118

bahagian bahagian: 143183

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 294 mOhm @ 2.6A, 10V,

Senarai harapan

Nexperia USA Inc.

PMPB10XNEZ

bahagian bahagian: 181421

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9A, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMPB23XNEZ

bahagian bahagian: 124658

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7A, 4.5V,

Senarai harapan

Nexperia USA Inc.

PHP23NQ11T,127

bahagian bahagian: 71793

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 110V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 13A, 10V,

Senarai harapan

PSMN034-100PS,127

Nexperia USA Inc.

PSMN034-100PS,127

bahagian bahagian: 62612

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 34.5 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

PMZ600UNEYL

bahagian bahagian: 177703

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V,

Senarai harapan

PSMN1R2-25YLC,115

Nexperia USA Inc.

PSMN1R2-25YLC,115

bahagian bahagian: 134456

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.3 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

PMCM4401VPEZ

bahagian bahagian: 102564

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3A, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMCM4401UNEZ

bahagian bahagian: 162770

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V,

Senarai harapan

PSMN4R6-60PS,127

Nexperia USA Inc.

PSMN4R6-60PS,127

bahagian bahagian: 39675

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 25A, 10V,

Senarai harapan

PSMN3R8-100BS,118

Nexperia USA Inc.

PSMN3R8-100BS,118

bahagian bahagian: 41338

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

PSMN021-100YLX

bahagian bahagian: 167405

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 21.5 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

PMV50XPR

bahagian bahagian: 136553

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V,

Senarai harapan

Nexperia USA Inc.

PSMN1R4-30YLDX

bahagian bahagian: 160382

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.42 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

PMZ600UNELYL

bahagian bahagian: 129738

Jenis FET: N-Channel, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA (Tc), Rds On (Maks) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMZ370UNEYL

bahagian bahagian: 109327

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 490 mOhm @ 500mA, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMCM6501UNEZ

bahagian bahagian: 195673

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMZB350UPE,315

bahagian bahagian: 138063

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 300mA, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMCM4401UPEZ

bahagian bahagian: 142773

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 3A, 4.5V,

Senarai harapan

Nexperia USA Inc.

PMXB43UNEZ

bahagian bahagian: 21530

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 3.2A, 4.5V,

Senarai harapan

1135

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