Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 13

PMEG2010AEBF

bahagian bahagian: 154200

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG6002EBF

bahagian bahagian: 121500

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Nexperia USA Inc.

PMEG10030ELPX

bahagian bahagian: 193077

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 770mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 8ns,

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Nexperia USA Inc.

RB520S30YL

bahagian bahagian: 182417

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

RB521S30,115

bahagian bahagian: 174908

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Nexperia USA Inc.

ES1DRX

bahagian bahagian: 148792

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Nexperia USA Inc.

ES1DVRX

bahagian bahagian: 170022

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 875mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Nexperia USA Inc.

PMEG1201AESFYL

bahagian bahagian: 2281

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 12V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 200mV @ 30mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.2ns,

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Nexperia USA Inc.

PMEG060V030EPDZ

bahagian bahagian: 123547

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 530mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 12ns,

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Nexperia USA Inc.

PMEG030V050EPDZ

bahagian bahagian: 121458

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 16ns,

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Nexperia USA Inc.

PMEG030V030EPDZ

bahagian bahagian: 180038

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 12ns,

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Nexperia USA Inc.

PMEG040V030EPDZ

bahagian bahagian: 114545

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 13ns,

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Nexperia USA Inc.

PMEG040V050EPDZ

bahagian bahagian: 166206

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 13ns,

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Nexperia USA Inc.

PMEG45A10EPDZ

bahagian bahagian: 126741

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 540mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 13ns,

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Nexperia USA Inc.

PMEG100V080ELPDZ

bahagian bahagian: 144131

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 10ns,

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Nexperia USA Inc.

PMEG4005AEA/8X

bahagian bahagian: 1447

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 500mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG2005AEA/DG,115

bahagian bahagian: 1297

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 500mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 390mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG6020ETP,115

bahagian bahagian: 137873

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 530mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 8.6ns,

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Nexperia USA Inc.

PMEG4020EPASX

bahagian bahagian: 164587

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 535mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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Nexperia USA Inc.

PMEG4010CEGWX

bahagian bahagian: 128675

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG100V060ELPDZ

bahagian bahagian: 107376

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 8ns,

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Nexperia USA Inc.

PMEG3020DEP,115

bahagian bahagian: 127640

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG3010CEJ,115

bahagian bahagian: 132209

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG3020EPA,115

bahagian bahagian: 121236

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 47ns,

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Nexperia USA Inc.

PMEG40T50EPX

bahagian bahagian: 9971

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 24ns,

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Nexperia USA Inc.

PMEG10020AELPX

bahagian bahagian: 149972

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 770mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 5ns,

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Nexperia USA Inc.

PMEG3020CEP,115

bahagian bahagian: 114518

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 420mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG3010EP,115

bahagian bahagian: 152778

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG3020BER,115

bahagian bahagian: 160209

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG045V150EPDAZ

bahagian bahagian: 154993

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 19ns,

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Nexperia USA Inc.

PMEG050V030EPDZ

bahagian bahagian: 173552

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 530mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 12ns,

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Nexperia USA Inc.

PMEG3010BEV,115

bahagian bahagian: 174450

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 560mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG40T20ERX

bahagian bahagian: 9949

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 11.5ns,

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Nexperia USA Inc.

PMEG2005EGWX

bahagian bahagian: 121506

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 390mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Nexperia USA Inc.

PMEG4020EPA,115

bahagian bahagian: 142386

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 535mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 85ns,

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Nexperia USA Inc.

ES1GRX

bahagian bahagian: 9970

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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