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Diod - Kapasitansi Berubah (Varicaps, Varactors)

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  • Diod - Kapasitansi Berubah (Varicaps, Varactors)
SVC203C-TB-E
ON Semiconductor

SVC203C-TB-E

bahagian bahagian: 178025

Kapasiti @ Vr, F: 13.4pF @ 9V, 1MHz, Nisbah Kapasiti: 4.6, Keadaan Nisbah Kapasitansi: C1/C9, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 60 @ 3V, 100MHz,

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MMBV109LT3G
ON Semiconductor

MMBV109LT3G

bahagian bahagian: 7476

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV409LT1
ON Semiconductor

MMBV409LT1

bahagian bahagian: 4762

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 1.9, Keadaan Nisbah Kapasitansi: C3/C8, Voltan - Terbalik Puncak (Maks): 20V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV3102LT1
ON Semiconductor

MMBV3102LT1

bahagian bahagian: 7497

Kapasiti @ Vr, F: 25pF @ 3V, 1MHz, Nisbah Kapasiti: 4.8, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV809LT3G
ON Semiconductor

MMBV809LT3G

bahagian bahagian: 7496

Kapasiti @ Vr, F: 6.1pF @ 2V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 20V, Jenis Diod: Single, Q @ Vr, F: 75 @ 3V, 500MHz,

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MV104G
ON Semiconductor

MV104G

bahagian bahagian: 7467

Kapasiti @ Vr, F: 42pF @ 3V, 1MHz, Nisbah Kapasiti: 2.8, Keadaan Nisbah Kapasitansi: C3/C30, Voltan - Terbalik Puncak (Maks): 32V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 140 @ 3V, 100MHz,

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MMBV105GLT1G
ON Semiconductor

MMBV105GLT1G

bahagian bahagian: 7457

Kapasiti @ Vr, F: 2.8pF @ 25V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 250 @ 3V, 50MHz,

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MMBV2108LT1G
ON Semiconductor

MMBV2108LT1G

bahagian bahagian: 7478

Kapasiti @ Vr, F: 29.7pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 300 @ 4V, 50MHz,

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MMBV409LT1G
ON Semiconductor

MMBV409LT1G

bahagian bahagian: 7505

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 1.9, Keadaan Nisbah Kapasitansi: C3/C8, Voltan - Terbalik Puncak (Maks): 20V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV2105LT1
ON Semiconductor

MMBV2105LT1

bahagian bahagian: 7497

Kapasiti @ Vr, F: 16.5pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 400 @ 4V, 50MHz,

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MV209G
ON Semiconductor

MV209G

bahagian bahagian: 7434

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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SVC236-TB-E
ON Semiconductor

SVC236-TB-E

bahagian bahagian: 172795

Kapasiti @ Vr, F: 16.84pF @ 6.5V, 1MHz, Nisbah Kapasiti: 5, Keadaan Nisbah Kapasitansi: C1/C6.5, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 70 @ 3V, 100MHz,

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MMBV105GLT1
ON Semiconductor

MMBV105GLT1

bahagian bahagian: 7466

Kapasiti @ Vr, F: 2.8pF @ 25V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 250 @ 3V, 50MHz,

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MV2105
ON Semiconductor

MV2105

bahagian bahagian: 4830

Kapasiti @ Vr, F: 16.5pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 400 @ 4V, 50MHz,

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SVC230-TB-E
ON Semiconductor

SVC230-TB-E

bahagian bahagian: 129142

Kapasiti @ Vr, F: 28.2pF @ 8V, 1MHz, Nisbah Kapasiti: 1.75, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 100 @ 3V, 100MHz,

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MV2101
ON Semiconductor

MV2101

bahagian bahagian: 7532

Kapasiti @ Vr, F: 7.5pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 450 @ 4V, 50MHz,

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MMVL109T1G
ON Semiconductor

MMVL109T1G

bahagian bahagian: 7529

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV2105LT1G
ON Semiconductor

MMBV2105LT1G

bahagian bahagian: 7480

Kapasiti @ Vr, F: 16.5pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 400 @ 4V, 50MHz,

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MMVL809T1G
ON Semiconductor

MMVL809T1G

bahagian bahagian: 7476

Kapasiti @ Vr, F: 6.1pF @ 2V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 20V, Jenis Diod: Single, Q @ Vr, F: 75 @ 3V, 500MHz,

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MMBV2108LT1
ON Semiconductor

MMBV2108LT1

bahagian bahagian: 7527

Kapasiti @ Vr, F: 29.7pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 300 @ 4V, 50MHz,

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SVC270-TL-E
ON Semiconductor

SVC270-TL-E

bahagian bahagian: 119447

Kapasiti @ Vr, F: 28.2pF @ 8V, 1MHz, Nisbah Kapasiti: 1.75, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 100 @ 3V, 100MHz,

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SVC272-TL-E
ON Semiconductor

SVC272-TL-E

bahagian bahagian: 157486

Kapasiti @ Vr, F: 18.55pF @ 8V, 1MHz, Nisbah Kapasiti: 2.3, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 150 @ 2V, 100MHz,

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SVC383T-TL-E
ON Semiconductor

SVC383T-TL-E

bahagian bahagian: 7528

Kapasiti @ Vr, F: 27pF @ 6.5V, 1MHz, Nisbah Kapasiti: 24.5, Keadaan Nisbah Kapasitansi: C1/C6.5, Voltan - Terbalik Puncak (Maks): 33V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 1V, 1MHz,

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MMBV109LT1G
ON Semiconductor

MMBV109LT1G

bahagian bahagian: 7474

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV2109LT1
ON Semiconductor

MMBV2109LT1

bahagian bahagian: 7496

Kapasiti @ Vr, F: 36.3pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MMBV609LT1
ON Semiconductor

MMBV609LT1

bahagian bahagian: 7446

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 2.4, Keadaan Nisbah Kapasitansi: C3/C8, Voltan - Terbalik Puncak (Maks): 20V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 450 @ 3V, 50MHz,

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MMBV432LT1
ON Semiconductor

MMBV432LT1

bahagian bahagian: 7461

Kapasiti @ Vr, F: 48.1pF @ 2V, 1MHz, Nisbah Kapasiti: 2, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 14V, Jenis Diod: 1 Pair Common Cathode, Q @ Vr, F: 150 @ 2V, 100MHz,

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MMBV2109LT1G
ON Semiconductor

MMBV2109LT1G

bahagian bahagian: 7468

Kapasiti @ Vr, F: 36.3pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MV2109G
ON Semiconductor

MV2109G

bahagian bahagian: 7495

Kapasiti @ Vr, F: 36.3pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MMVL2101T1G
ON Semiconductor

MMVL2101T1G

bahagian bahagian: 7502

Kapasiti @ Vr, F: 7.5pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 450 @ 4V, 50MHz,

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MMBV2101LT1G
ON Semiconductor

MMBV2101LT1G

bahagian bahagian: 7426

Kapasiti @ Vr, F: 7.5pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 450 @ 4V, 50MHz,

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MMBV2107LT1
ON Semiconductor

MMBV2107LT1

bahagian bahagian: 4758

Kapasiti @ Vr, F: 24.2pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 350 @ 4V, 50MHz,

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MMBV109LT3
ON Semiconductor

MMBV109LT3

bahagian bahagian: 7449

Kapasiti @ Vr, F: 32pF @ 3V, 1MHz, Nisbah Kapasiti: 6.5, Keadaan Nisbah Kapasitansi: C3/C25, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MV2109RLRAG
ON Semiconductor

MV2109RLRAG

bahagian bahagian: 7459

Kapasiti @ Vr, F: 36.3pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MMBV809LT1
ON Semiconductor

MMBV809LT1

bahagian bahagian: 7482

Kapasiti @ Vr, F: 6.1pF @ 2V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 20V, Jenis Diod: Single, Q @ Vr, F: 75 @ 3V, 500MHz,

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MMBV2107LT1G
ON Semiconductor

MMBV2107LT1G

bahagian bahagian: 7528

Kapasiti @ Vr, F: 24.2pF @ 4V, 1MHz, Nisbah Kapasiti: 3.2, Keadaan Nisbah Kapasitansi: C2/C30, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single, Q @ Vr, F: 350 @ 4V, 50MHz,

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