Transistor - FET, MOSFET - Susunan

QJD1210010

bahagian bahagian: 2869

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

QJD1210SA1

bahagian bahagian: 2941

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Maks) @ Id: 1.6V @ 34mA,

QJD1210SA2

bahagian bahagian: 2896

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Maks) @ Id: 1.6V @ 34mA,

QJD1210SB1

bahagian bahagian: 2931

QJD1210011

bahagian bahagian: 3308

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 5V @ 10mA,