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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
NP15P06SLG-E1-AY
Renesas Electronics America

NP15P06SLG-E1-AY

bahagian bahagian: 1126

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 7.5A, 10V,

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NP74N04YUG-E1-AY
Renesas Electronics America

NP74N04YUG-E1-AY

bahagian bahagian: 1233

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V,

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NP75P04YLG-E1-AY
Renesas Electronics America

NP75P04YLG-E1-AY

bahagian bahagian: 1153

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 9.7 mOhm @ 37.5A, 10V,

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NP80N055MHE-S18-AY
Renesas Electronics America

NP80N055MHE-S18-AY

bahagian bahagian: 1152

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 40A, 10V,

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NP80N055NDG-S18-AY
Renesas Electronics America

NP80N055NDG-S18-AY

bahagian bahagian: 1173

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.9 mOhm @ 40A, 10V,

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NP100P06PLG-E1-AY
Renesas Electronics America

NP100P06PLG-E1-AY

bahagian bahagian: 1204

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 50A, 10V,

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NP36P04KDG-E1-AY
Renesas Electronics America

NP36P04KDG-E1-AY

bahagian bahagian: 1151

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 18A, 10V,

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NP160N04TDG-E1-AY
Renesas Electronics America

NP160N04TDG-E1-AY

bahagian bahagian: 1181

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2 mOhm @ 80A, 10V,

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RJK0353DPA-01#J0B
Renesas Electronics America

RJK0353DPA-01#J0B

bahagian bahagian: 164042

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 17.5A, 10V,

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RJK0851DPB-00#J5
Renesas Electronics America

RJK0851DPB-00#J5

bahagian bahagian: 125161

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 10A, 10V,

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NP160N055TUJ-E1-AY
Renesas Electronics America

NP160N055TUJ-E1-AY

bahagian bahagian: 1194

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 80A, 10V,

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NP80N055KLE-E1-AY
Renesas Electronics America

NP80N055KLE-E1-AY

bahagian bahagian: 1211

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 40A, 10V,

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NP160N04TUJ-E1-AY
Renesas Electronics America

NP160N04TUJ-E1-AY

bahagian bahagian: 6194

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2 mOhm @ 80A, 10V,

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NP60N04MUG-S18-AY
Renesas Electronics America

NP60N04MUG-S18-AY

bahagian bahagian: 1119

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 30A, 10V,

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NP180N04TUJ-E1-AY
Renesas Electronics America

NP180N04TUJ-E1-AY

bahagian bahagian: 1197

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 mOhm @ 90A, 10V,

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NP60N03SUG-E1-AY
Renesas Electronics America

NP60N03SUG-E1-AY

bahagian bahagian: 1234

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 30A, 10V,

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NP88N075KUE-E1-AY
Renesas Electronics America

NP88N075KUE-E1-AY

bahagian bahagian: 1209

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 88A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 44A, 10V,

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NP36P04SDG-E1-AY
Renesas Electronics America

NP36P04SDG-E1-AY

bahagian bahagian: 1154

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 18A, 10V,

Senarai harapan
RJK6024DPD-00#J2
Renesas Electronics America

RJK6024DPD-00#J2

bahagian bahagian: 1206

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 42 Ohm @ 200mA, 10V,

Senarai harapan
NP34N055SLE-E1-AY
Renesas Electronics America

NP34N055SLE-E1-AY

bahagian bahagian: 1144

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 17A, 10V,

Senarai harapan
NP180N055TUJ-E1-AY
Renesas Electronics America

NP180N055TUJ-E1-AY

bahagian bahagian: 6170

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 90A, 10V,

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RJK0451DPB-00#J5
Renesas Electronics America

RJK0451DPB-00#J5

bahagian bahagian: 125147

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 17.5A, 10V,

Senarai harapan
NP88N04NUG-S18-AY
Renesas Electronics America

NP88N04NUG-S18-AY

bahagian bahagian: 1135

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 88A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 44A, 10V,

Senarai harapan
NP50P04KDG-E1-AY
Renesas Electronics America

NP50P04KDG-E1-AY

bahagian bahagian: 1131

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

Senarai harapan
NP82N04NUG-S18-AY
Renesas Electronics America

NP82N04NUG-S18-AY

bahagian bahagian: 1158

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 82A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 41A, 10V,

Senarai harapan
NP35N04YUG-E1-AY
Renesas Electronics America

NP35N04YUG-E1-AY

bahagian bahagian: 1203

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 17.5A, 10V,

Senarai harapan
NP55N03SUG-E1-AY
Renesas Electronics America

NP55N03SUG-E1-AY

bahagian bahagian: 1169

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 28A, 10V,

Senarai harapan
NP80N06MLG-S18-AY
Renesas Electronics America

NP80N06MLG-S18-AY

bahagian bahagian: 6116

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 40A, 10V,

Senarai harapan
NP32N055SLE-E1-AY
Renesas Electronics America

NP32N055SLE-E1-AY

bahagian bahagian: 1182

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 16A, 10V,

Senarai harapan
NP36P06SLG-E1-AY
Renesas Electronics America

NP36P06SLG-E1-AY

bahagian bahagian: 1185

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 18A, 10V,

Senarai harapan
NP82N04PDG-E1-AY
Renesas Electronics America

NP82N04PDG-E1-AY

bahagian bahagian: 1131

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 82A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 41A, 10V,

Senarai harapan
NP100P04PLG-E1-AY
Renesas Electronics America

NP100P04PLG-E1-AY

bahagian bahagian: 1193

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 50A, 10V,

Senarai harapan
NP100P04PDG-E1-AY
Renesas Electronics America

NP100P04PDG-E1-AY

bahagian bahagian: 24318

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 50A, 10V,

Senarai harapan
NP22N055SLE-E1-AY
Renesas Electronics America

NP22N055SLE-E1-AY

bahagian bahagian: 1154

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 11A, 10V,

Senarai harapan
NP80N06PLG-E1B-AY
Renesas Electronics America

NP80N06PLG-E1B-AY

bahagian bahagian: 1172

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 40A, 10V,

Senarai harapan
NP50P03YDG-E1-AY
Renesas Electronics America

NP50P03YDG-E1-AY

bahagian bahagian: 1191

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8.4 mOhm @ 25A, 10V,

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