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Thyristors - SCR

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  • Thyristors - SCR
MCR100-8 A1G
Taiwan Semiconductor Corporation

MCR100-8 A1G

bahagian bahagian: 229

Voltan - Keadaan Mati: 600V, Voltan - Pencetus Gerbang (Vgt) (Maks): 800mV, Semasa - Pencetus Gerbang (Igt) (Maks): 200µA, Voltan - Keadaan (Vtm) (Maks): 1.7V, Semasa - Keadaan (Ini (RMS)) (Maksimum): 800mA,

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MCR100-3 A1G
Taiwan Semiconductor Corporation

MCR100-3 A1G

bahagian bahagian: 172

Voltan - Keadaan Mati: 100V, Voltan - Pencetus Gerbang (Vgt) (Maks): 800mV, Semasa - Pencetus Gerbang (Igt) (Maks): 200µA, Voltan - Keadaan (Vtm) (Maks): 1.7V, Semasa - Keadaan (Ini (RMS)) (Maksimum): 800mA,

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MCR100-7 A1G
Taiwan Semiconductor Corporation

MCR100-7 A1G

bahagian bahagian: 169

Voltan - Keadaan Mati: 500V, Voltan - Pencetus Gerbang (Vgt) (Maks): 800mV, Semasa - Pencetus Gerbang (Igt) (Maks): 200µA, Voltan - Keadaan (Vtm) (Maks): 1.7V, Semasa - Keadaan (Ini (RMS)) (Maksimum): 800mA,

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MCR100-6 A1G
Taiwan Semiconductor Corporation

MCR100-6 A1G

bahagian bahagian: 265

Voltan - Keadaan Mati: 400V, Voltan - Pencetus Gerbang (Vgt) (Maks): 800mV, Semasa - Pencetus Gerbang (Igt) (Maks): 200µA, Voltan - Keadaan (Vtm) (Maks): 1.7V, Semasa - Keadaan (Ini (RMS)) (Maksimum): 800mA,

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MCR100-5 A1G
Taiwan Semiconductor Corporation

MCR100-5 A1G

bahagian bahagian: 255

Voltan - Keadaan Mati: 300V, Voltan - Pencetus Gerbang (Vgt) (Maks): 800mV, Semasa - Pencetus Gerbang (Igt) (Maks): 200µA, Voltan - Keadaan (Vtm) (Maks): 1.7V, Semasa - Keadaan (Ini (RMS)) (Maksimum): 800mA,

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MCR100-4 A1G
Taiwan Semiconductor Corporation

MCR100-4 A1G

bahagian bahagian: 254

Voltan - Keadaan Mati: 200V, Voltan - Pencetus Gerbang (Vgt) (Maks): 800mV, Semasa - Pencetus Gerbang (Igt) (Maks): 200µA, Voltan - Keadaan (Vtm) (Maks): 1.7V, Semasa - Keadaan (Ini (RMS)) (Maksimum): 800mA,

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