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Induktor Tetap

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IM04SH910J
Vishay Dale

IM04SH910J

bahagian bahagian: 10060

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 91µH, Toleransi: ±5%, Peringkat Semasa: 136mA,

Senarai harapan
IM02ST271J
Vishay Dale

IM02ST271J

bahagian bahagian: 9680

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 270µH, Toleransi: ±5%, Peringkat Semasa: 47mA,

Senarai harapan
IM02RUR82J
Vishay Dale

IM02RUR82J

bahagian bahagian: 9624

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 820nH, Toleransi: ±5%, Peringkat Semasa: 415mA,

Senarai harapan
IM04ST390J
Vishay Dale

IM04ST390J

bahagian bahagian: 41

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 39µH, Toleransi: ±5%, Peringkat Semasa: 176mA,

Senarai harapan
IM04BHR47H
Vishay Dale

IM04BHR47H

bahagian bahagian: 9794

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 470nH, Toleransi: ±3%, Peringkat Semasa: 1.225A,

Senarai harapan
IM04ST5R6K
Vishay Dale

IM04ST5R6K

bahagian bahagian: 79

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 5.6µH, Toleransi: ±10%, Peringkat Semasa: 495mA,

Senarai harapan
IM04BHR47K
Vishay Dale

IM04BHR47K

bahagian bahagian: 9865

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 470nH, Toleransi: ±10%, Peringkat Semasa: 1.225A,

Senarai harapan
IM02SH6R8K
Vishay Dale

IM02SH6R8K

bahagian bahagian: 9733

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 6.8µH, Toleransi: ±10%, Peringkat Semasa: 175mA,

Senarai harapan
IM04SH2R7K
Vishay Dale

IM04SH2R7K

bahagian bahagian: 2095

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 2.7µH, Toleransi: ±10%, Peringkat Semasa: 385mA,

Senarai harapan
IM04ST4R7J
Vishay Dale

IM04ST4R7J

bahagian bahagian: 73

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 4.7µH, Toleransi: ±5%, Peringkat Semasa: 260mA,

Senarai harapan
IM04ES331J
Vishay Dale

IM04ES331J

bahagian bahagian: 10017

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 330µH, Toleransi: ±5%, Peringkat Semasa: 123mA,

Senarai harapan
IM04ESR15M
Vishay Dale

IM04ESR15M

bahagian bahagian: 9893

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 150nH, Toleransi: ±20%, Peringkat Semasa: 2.45A,

Senarai harapan
IM06BH821J
Vishay Dale

IM06BH821J

bahagian bahagian: 117

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 820µH, Toleransi: ±5%, Peringkat Semasa: 81mA,

Senarai harapan
IM02SHR15K
Vishay Dale

IM02SHR15K

bahagian bahagian: 9652

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 150nH, Toleransi: ±10%, Peringkat Semasa: 1.2A,

Senarai harapan
IM04BH4R7J
Vishay Dale

IM04BH4R7J

bahagian bahagian: 9855

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 4.7µH, Toleransi: ±5%, Peringkat Semasa: 260mA,

Senarai harapan
IM04RU181J
Vishay Dale

IM04RU181J

bahagian bahagian: 9888

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 180µH, Toleransi: ±5%, Peringkat Semasa: 108mA,

Senarai harapan
IM02STR16J
Vishay Dale

IM02STR16J

bahagian bahagian: 9751

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 160nH, Toleransi: ±5%,

Senarai harapan
IM02SH471J
Vishay Dale

IM02SH471J

bahagian bahagian: 9635

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 470µH, Toleransi: ±5%, Peringkat Semasa: 36mA,

Senarai harapan
IM02SHR18K
Vishay Dale

IM02SHR18K

bahagian bahagian: 9658

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 180nH, Toleransi: ±10%, Peringkat Semasa: 1.105A,

Senarai harapan
IM02STR68J
Vishay Dale

IM02STR68J

bahagian bahagian: 9793

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 680nH, Toleransi: ±5%, Peringkat Semasa: 495mA,

Senarai harapan
IM04SH2R2J
Vishay Dale

IM04SH2R2J

bahagian bahagian: 10003

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 2.2µH, Toleransi: ±5%, Peringkat Semasa: 435mA,

Senarai harapan
IM02SH561J
Vishay Dale

IM02SH561J

bahagian bahagian: 9679

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 560µH, Toleransi: ±5%, Peringkat Semasa: 35mA,

Senarai harapan
IM04ER180K
Vishay Dale

IM04ER180K

bahagian bahagian: 9882

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 18µH, Toleransi: ±10%, Peringkat Semasa: 185mA,

Senarai harapan
IM02ST680K
Vishay Dale

IM02ST680K

bahagian bahagian: 9697

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 68µH, Toleransi: ±10%, Peringkat Semasa: 92mA,

Senarai harapan
IRF01SH101J
Vishay Dale

IRF01SH101J

bahagian bahagian: 9830

Bahan - Teras: Ferrite, Kearuhan: 100µH, Toleransi: ±5%, Peringkat Semasa: 165mA,

Senarai harapan
IM02ST102J
Vishay Dale

IM02ST102J

bahagian bahagian: 9657

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 1mH, Toleransi: ±5%, Peringkat Semasa: 28mA,

Senarai harapan
IM04BH470K
Vishay Dale

IM04BH470K

bahagian bahagian: 9771

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 47µH, Toleransi: ±10%, Peringkat Semasa: 170mA,

Senarai harapan
IM04SH820J
Vishay Dale

IM04SH820J

bahagian bahagian: 10030

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 82µH, Toleransi: ±5%, Peringkat Semasa: 143mA,

Senarai harapan
IM04RUR30F
Vishay Dale

IM04RUR30F

bahagian bahagian: 9913

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 300nH, Toleransi: ±1%,

Senarai harapan
IM02SH470K
Vishay Dale

IM02SH470K

bahagian bahagian: 9654

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 47µH, Toleransi: ±10%, Peringkat Semasa: 110mA,

Senarai harapan
IM04ST560J
Vishay Dale

IM04ST560J

bahagian bahagian: 27

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 56µH, Toleransi: ±5%, Peringkat Semasa: 164mA,

Senarai harapan
IM04ER4R7K
Vishay Dale

IM04ER4R7K

bahagian bahagian: 9918

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 4.7µH, Toleransi: ±10%, Peringkat Semasa: 260mA,

Senarai harapan
IM02STR22K
Vishay Dale

IM02STR22K

bahagian bahagian: 9770

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 220nH, Toleransi: ±10%, Peringkat Semasa: 1.025A,

Senarai harapan
IM04ST3R3J
Vishay Dale

IM04ST3R3J

bahagian bahagian: 96

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 3.3µH, Toleransi: ±5%, Peringkat Semasa: 300mA,

Senarai harapan
IM04BH470J
Vishay Dale

IM04BH470J

bahagian bahagian: 9773

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 47µH, Toleransi: ±5%, Peringkat Semasa: 170mA,

Senarai harapan
IM04RU471J
Vishay Dale

IM04RU471J

bahagian bahagian: 9937

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 470µH, Toleransi: ±5%, Peringkat Semasa: 100mA,

Senarai harapan