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IM04RU330J
Vishay Dale

IM04RU330J

bahagian bahagian: 9977

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 33µH, Toleransi: ±5%, Peringkat Semasa: 165mA,

Senarai harapan
IM06BHR82K
Vishay Dale

IM06BHR82K

bahagian bahagian: 87

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 820nH, Toleransi: ±10%, Peringkat Semasa: 1.1A,

Senarai harapan
IM02RU470K
Vishay Dale

IM02RU470K

bahagian bahagian: 9606

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 47µH, Toleransi: ±10%, Peringkat Semasa: 110mA,

Senarai harapan
IM02SH3R9J
Vishay Dale

IM02SH3R9J

bahagian bahagian: 9677

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 3.9µH, Toleransi: ±5%, Peringkat Semasa: 250mA,

Senarai harapan
IM02ST3R3K
Vishay Dale

IM02ST3R3K

bahagian bahagian: 9782

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 3.3µH, Toleransi: ±10%, Peringkat Semasa: 270mA,

Senarai harapan
IM02ST180J
Vishay Dale

IM02ST180J

bahagian bahagian: 9727

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 18µH, Toleransi: ±5%, Peringkat Semasa: 145mA,

Senarai harapan
IM02ST821K
Vishay Dale

IM02ST821K

bahagian bahagian: 9779

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 820µH, Toleransi: ±10%, Peringkat Semasa: 29mA,

Senarai harapan
IM02ST120J
Vishay Dale

IM02ST120J

bahagian bahagian: 9723

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 12µH, Toleransi: ±5%, Peringkat Semasa: 155mA,

Senarai harapan
IM04RU1R2J
Vishay Dale

IM04RU1R2J

bahagian bahagian: 9942

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 1.2µH, Toleransi: ±5%, Peringkat Semasa: 650mA,

Senarai harapan
IM04RUR47J
Vishay Dale

IM04RUR47J

bahagian bahagian: 9921

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 470nH, Toleransi: ±5%, Peringkat Semasa: 1.225A,

Senarai harapan
IM04ER330K
Vishay Dale

IM04ER330K

bahagian bahagian: 9906

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 33µH, Toleransi: ±10%, Peringkat Semasa: 165mA,

Senarai harapan
IM02SH120J
Vishay Dale

IM02SH120J

bahagian bahagian: 9627

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 12µH, Toleransi: ±5%, Peringkat Semasa: 155mA,

Senarai harapan
IM02STR33J
Vishay Dale

IM02STR33J

bahagian bahagian: 9743

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 330nH, Toleransi: ±5%, Peringkat Semasa: 815mA,

Senarai harapan
IM04ES470J
Vishay Dale

IM04ES470J

bahagian bahagian: 9946

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 47µH, Toleransi: ±5%, Peringkat Semasa: 170mA,

Senarai harapan
IM02RUR56G
Vishay Dale

IM02RUR56G

bahagian bahagian: 10059

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 560nH, Toleransi: ±2%, Peringkat Semasa: 545mA,

Senarai harapan
IM02RU271J
Vishay Dale

IM02RU271J

bahagian bahagian: 9636

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 270µH, Toleransi: ±5%, Peringkat Semasa: 47mA,

Senarai harapan
IM04RUR15J
Vishay Dale

IM04RUR15J

bahagian bahagian: 9964

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 150nH, Toleransi: ±5%, Peringkat Semasa: 2.45A,

Senarai harapan
IM04ER151J
Vishay Dale

IM04ER151J

bahagian bahagian: 9870

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 150µH, Toleransi: ±5%, Peringkat Semasa: 114mA,

Senarai harapan
IM04RU120J
Vishay Dale

IM04RU120J

bahagian bahagian: 9909

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 12µH, Toleransi: ±5%, Peringkat Semasa: 265mA,

Senarai harapan
IM02STR56J
Vishay Dale

IM02STR56J

bahagian bahagian: 9758

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 560nH, Toleransi: ±5%, Peringkat Semasa: 545mA,

Senarai harapan
IM04BH1R0H
Vishay Dale

IM04BH1R0H

bahagian bahagian: 9823

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 1µH, Toleransi: ±3%, Peringkat Semasa: 785mA,

Senarai harapan
IM04RUR56K
Vishay Dale

IM04RUR56K

bahagian bahagian: 9917

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 560nH, Toleransi: ±10%, Peringkat Semasa: 1.15A,

Senarai harapan
IM02SH4R7H
Vishay Dale

IM02SH4R7H

bahagian bahagian: 9680

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 4.7µH, Toleransi: ±3%, Peringkat Semasa: 230mA,

Senarai harapan
IM02RU2R0J
Vishay Dale

IM02RU2R0J

bahagian bahagian: 9624

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 2µH, Toleransi: ±5%,

Senarai harapan
IM04EV150K
Vishay Dale

IM04EV150K

bahagian bahagian: 9888

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 15µH, Toleransi: ±10%, Peringkat Semasa: 240mA,

Senarai harapan
IM02RU2R7J
Vishay Dale

IM02RU2R7J

bahagian bahagian: 9621

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 2.7µH, Toleransi: ±5%, Peringkat Semasa: 355mA,

Senarai harapan
IM04RU2R5K
Vishay Dale

IM04RU2R5K

bahagian bahagian: 9936

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 2.5µH, Toleransi: ±10%,

Senarai harapan
IM06BH680J
Vishay Dale

IM06BH680J

bahagian bahagian: 60

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 68µH, Toleransi: ±5%, Peringkat Semasa: 156mA,

Senarai harapan
IM02BHR10G
Vishay Dale

IM02BHR10G

bahagian bahagian: 9455

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 100nH, Toleransi: ±2%, Peringkat Semasa: 1.35A,

Senarai harapan
IM02EVR10K
Vishay Dale

IM02EVR10K

bahagian bahagian: 9568

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 100nH, Toleransi: ±10%, Peringkat Semasa: 1.35A,

Senarai harapan
IM02EBR39K
Vishay Dale

IM02EBR39K

bahagian bahagian: 9469

Jenis: Molded, Bahan - Teras: Phenolic, Kearuhan: 390nH, Toleransi: ±10%, Peringkat Semasa: 700mA,

Senarai harapan
IM02BH2R2F
Vishay Dale

IM02BH2R2F

bahagian bahagian: 9352

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 2.2µH, Toleransi: ±1%, Peringkat Semasa: 395mA,

Senarai harapan
IM02EV1R5K
Vishay Dale

IM02EV1R5K

bahagian bahagian: 9530

Jenis: Molded, Bahan - Teras: Iron, Kearuhan: 1.5µH, Toleransi: ±10%, Peringkat Semasa: 535mA,

Senarai harapan
IM02BH561K
Vishay Dale

IM02BH561K

bahagian bahagian: 9471

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 560µH, Toleransi: ±10%, Peringkat Semasa: 35mA,

Senarai harapan
IM02BH390J
Vishay Dale

IM02BH390J

bahagian bahagian: 9418

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 39µH, Toleransi: ±5%, Peringkat Semasa: 125mA,

Senarai harapan
IM02BH681K
Vishay Dale

IM02BH681K

bahagian bahagian: 9466

Jenis: Molded, Bahan - Teras: Ferrite, Kearuhan: 680µH, Toleransi: ±10%, Peringkat Semasa: 30mA,

Senarai harapan