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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
PHE13009,127
WeEn Semiconductors

PHE13009,127

bahagian bahagian: 95117

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 12A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 1.6A, 8A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V,

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PHD13003C,412
WeEn Semiconductors

PHD13003C,412

bahagian bahagian: 174370

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V,

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PHE13003C,126
WeEn Semiconductors

PHE13003C,126

bahagian bahagian: 104240

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V,

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