Type. | Perihalan |
Status Bahagian | Active |
---|---|
Jenis FET | N-Channel |
Teknologi | SiCFET (Silicon Carbide) |
Saliran ke Voltan Sumber (Vdss) | 1700V |
Semasa - Saliran Berterusan (Id) @ 25 ° C | 72A (Tc) |
Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup) | 20V |
Rds On (Maks) @ Id, Vgs | 70 mOhm @ 50A, 20V |
Vgs (th) (Maks) @ Id | 4V @ 18mA |
Bayaran Gerbang (Qg) (Maks) @ Vgs | 188nC @ 20V |
Vgs (Maks) | +25V, -10V |
Kapasiti Input (Ciss) (Maks) @ Vds | 3672pF @ 1kV |
Ciri FET | - |
Kekurangan Kuasa (Maks) | 520W (Tc) |
Suhu Operasi | -40°C ~ 150°C (TJ) |
Jenis Pemasangan | Through Hole |
Pakej Peranti Pembekal | TO-247-3 |
Pakej / Kes | TO-247-3 |
Status RoHS. | Patuh roh |
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Tahap Kepekaan Kelembapan (MSL) | Tidak berkenaan |
Status kitaran hayat | Usang / akhir hidup |
Kategori saham | Saham yang ada |