| Type. | Perihalan |
| Status Bahagian | Active |
|---|---|
| Jenis FET | N-Channel |
| Teknologi | SiCFET (Silicon Carbide) |
| Saliran ke Voltan Sumber (Vdss) | 1200V |
| Semasa - Saliran Berterusan (Id) @ 25 ° C | 20A (Tc) |
| Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup) | 20V |
| Rds On (Maks) @ Id, Vgs | 290 mOhm @ 10A, 20V |
| Vgs (th) (Maks) @ Id | 3.5V @ 1mA |
| Bayaran Gerbang (Qg) (Maks) @ Vgs | 45nC @ 20V |
| Vgs (Maks) | +25V, -10V |
| Kapasiti Input (Ciss) (Maks) @ Vds | 650pF @ 400V |
| Ciri FET | - |
| Kekurangan Kuasa (Maks) | 175W (Tc) |
| Suhu Operasi | -55°C ~ 200°C (TJ) |
| Jenis Pemasangan | Through Hole |
| Pakej Peranti Pembekal | HiP247™ |
| Pakej / Kes | TO-247-3 |
| Status RoHS. | Patuh roh |
|---|---|
| Tahap Kepekaan Kelembapan (MSL) | Tidak berkenaan |
| Status kitaran hayat | Usang / akhir hidup |
| Kategori saham | Saham yang ada |
