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Transistor - Unijunction Boleh Diprogramkan

2N6027
Central Semiconductor Corp

2N6027

bahagian bahagian: 76016

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 6V, Voltan - Offset (Vt): 1.6V, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 50µA,

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2N6028
Central Semiconductor Corp

2N6028

bahagian bahagian: 75982

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 6V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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CMPP6028 TR
Central Semiconductor Corp

CMPP6028 TR

bahagian bahagian: 54052

voltan: 40V, Kekurangan Kuasa (Maks): 167mW, Voltan - Keluaran: 6V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6028RLRMG
ON Semiconductor

2N6028RLRMG

bahagian bahagian: 2509

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6028RLRPG
ON Semiconductor

2N6028RLRPG

bahagian bahagian: 2537

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6027RL1G
ON Semiconductor

2N6027RL1G

bahagian bahagian: 2538

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 1.6V, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 50µA,

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2N6028RLRP
ON Semiconductor

2N6028RLRP

bahagian bahagian: 2531

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6027RL1
ON Semiconductor

2N6027RL1

bahagian bahagian: 2482

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 1.6V, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 50µA,

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2N6028G
ON Semiconductor

2N6028G

bahagian bahagian: 2534

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6027G
ON Semiconductor

2N6027G

bahagian bahagian: 2493

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 1.6V, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 50µA,

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2N6028RLRAG
ON Semiconductor

2N6028RLRAG

bahagian bahagian: 2505

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6027RLRAG
ON Semiconductor

2N6027RLRAG

bahagian bahagian: 2518

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 1.6V, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 50µA,

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2N6028RLRA
ON Semiconductor

2N6028RLRA

bahagian bahagian: 2522

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 600mV, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 25µA,

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2N6027RLRA
ON Semiconductor

2N6027RLRA

bahagian bahagian: 2457

voltan: 40V, Kekurangan Kuasa (Maks): 300mW, Voltan - Keluaran: 11V, Voltan - Offset (Vt): 1.6V, Semasa - Pintu ke Anode Leakage (Igao): 10nA, Semasa - Lembah (Iv): 50µA,

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