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Transistor - FET, MOSFET - RF

150-101N09A-00
IXYS-RF

150-101N09A-00

bahagian bahagian: 2609

Jenis Transistor: N-Channel, Peringkat Semasa: 9A,

Bersenang-senang
150-501N04A-00
IXYS-RF

150-501N04A-00

bahagian bahagian: 2589

Jenis Transistor: N-Channel, Peringkat Semasa: 4.5A,

Bersenang-senang
150-201N09A-00
IXYS-RF

150-201N09A-00

bahagian bahagian: 3417

Jenis Transistor: N-Channel, Peringkat Semasa: 9A,

Bersenang-senang
150-102N02A-00
IXYS-RF

150-102N02A-00

bahagian bahagian: 2261

Jenis Transistor: N-Channel, Peringkat Semasa: 2A,

Bersenang-senang
275-201N25A-00
IXYS-RF

275-201N25A-00

bahagian bahagian: 1378

Jenis Transistor: N-Channel, Peringkat Semasa: 25A,

Bersenang-senang
275X2-501N16A-00
IXYS-RF

275X2-501N16A-00

bahagian bahagian: 2046

Jenis Transistor: 2 N-Channel (Dual), Peringkat Semasa: 16A,

Bersenang-senang
275X2-102N06A-00
IXYS-RF

275X2-102N06A-00

bahagian bahagian: 2039

Jenis Transistor: 2 N-Channel (Dual), Peringkat Semasa: 8A,

Bersenang-senang
275-101N30A-00
IXYS-RF

275-101N30A-00

bahagian bahagian: 1808

Jenis Transistor: N-Channel, Peringkat Semasa: 30A,

Bersenang-senang
275-102N06A-00
IXYS-RF

275-102N06A-00

bahagian bahagian: 3066

Jenis Transistor: N-Channel, Peringkat Semasa: 8A,

Bersenang-senang
275-501N16A-00
IXYS-RF

275-501N16A-00

bahagian bahagian: 3128

Jenis Transistor: N-Channel, Peringkat Semasa: 16A,

Bersenang-senang
2SK3557-6-TB-E
ON Semiconductor

2SK3557-6-TB-E

bahagian bahagian: 134271

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 5V, Peringkat Semasa: 50mA, Gambar Kebisingan: 1dB,

Bersenang-senang
2N5484_D74Z
ON Semiconductor

2N5484_D74Z

bahagian bahagian: 4650

Jenis Transistor: N-Channel JFET, Kekerapan: 400MHz, Voltan - Ujian: 15V, Peringkat Semasa: 5mA, Gambar Kebisingan: 4dB,

Bersenang-senang
2SK3737-5-TL-E
ON Semiconductor

2SK3737-5-TL-E

bahagian bahagian: 6221

Jenis Transistor: N-Channel, Keuntungan: 35dB, Voltan - Ujian: 10V, Peringkat Semasa: 12mA, Gambar Kebisingan: 2dB,

Bersenang-senang
2N5952_J35Z
ON Semiconductor

2N5952_J35Z

bahagian bahagian: 6192

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 15V, Peringkat Semasa: 8mA, Gambar Kebisingan: 2dB,

Bersenang-senang
2N5953_J35Z
ON Semiconductor

2N5953_J35Z

bahagian bahagian: 4633

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 15V, Peringkat Semasa: 5mA, Gambar Kebisingan: 2dB,

Bersenang-senang
2N5951_J35Z
ON Semiconductor

2N5951_J35Z

bahagian bahagian: 6173

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 15V, Peringkat Semasa: 13mA, Gambar Kebisingan: 2dB,

Bersenang-senang
2N5247_J35Z
ON Semiconductor

2N5247_J35Z

bahagian bahagian: 6197

Jenis Transistor: N-Channel JFET, Kekerapan: 400MHz, Gambar Kebisingan: 4dB,

Bersenang-senang
2N5246_J35Z
ON Semiconductor

2N5246_J35Z

bahagian bahagian: 6123

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 7mA,

Bersenang-senang
2N5245_J35Z
ON Semiconductor

2N5245_J35Z

bahagian bahagian: 6116

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 15mA,

Bersenang-senang
2N3819
ON Semiconductor

2N3819

bahagian bahagian: 6095

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 100mA,

Bersenang-senang
2N5486RLRPG
ON Semiconductor

2N5486RLRPG

bahagian bahagian: 6157

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 30mA,

Bersenang-senang
2N5952_D74Z
ON Semiconductor

2N5952_D74Z

bahagian bahagian: 6087

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 15V, Peringkat Semasa: 8mA, Gambar Kebisingan: 2dB,

Bersenang-senang
2N5950_J18Z
ON Semiconductor

2N5950_J18Z

bahagian bahagian: 6128

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 15mA,

Bersenang-senang
2N5555_D74Z
ON Semiconductor

2N5555_D74Z

bahagian bahagian: 6135

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 15mA,

Bersenang-senang
2N5950
ON Semiconductor

2N5950

bahagian bahagian: 6111

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 15mA,

Bersenang-senang
2N5247
ON Semiconductor

2N5247

bahagian bahagian: 6095

Jenis Transistor: N-Channel JFET, Kekerapan: 400MHz, Gambar Kebisingan: 4dB,

Bersenang-senang
2SK3079ATE12LQ
Toshiba Semiconductor and Storage

2SK3079ATE12LQ

bahagian bahagian: 25011

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 13.5dB, Voltan - Ujian: 4.5V, Peringkat Semasa: 3A,

Bersenang-senang
2SK3756(TE12L,F)
Toshiba Semiconductor and Storage

2SK3756(TE12L,F)

bahagian bahagian: 38838

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 12dB, Voltan - Ujian: 4.5V, Peringkat Semasa: 1A,

Bersenang-senang
2SK3475TE12LF
Toshiba Semiconductor and Storage

2SK3475TE12LF

bahagian bahagian: 28639

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 14.9dB, Voltan - Ujian: 7.2V, Peringkat Semasa: 1A,

Bersenang-senang
2SK4037(TE12L,Q)
Toshiba Semiconductor and Storage

2SK4037(TE12L,Q)

bahagian bahagian: 22269

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 11.5dB, Voltan - Ujian: 6V, Peringkat Semasa: 3A,

Bersenang-senang
2SK209-BL(TE85L,F)
Toshiba Semiconductor and Storage

2SK209-BL(TE85L,F)

bahagian bahagian: 9945

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 10V, Gambar Kebisingan: 1dB,

Bersenang-senang
2SK209-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK209-Y(TE85L,F)

bahagian bahagian: 150111

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 10V, Gambar Kebisingan: 1dB,

Bersenang-senang
2SK3476(TE12L,Q)
Toshiba Semiconductor and Storage

2SK3476(TE12L,Q)

bahagian bahagian: 6228

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 11.4dB, Voltan - Ujian: 7.2V, Peringkat Semasa: 3A,

Bersenang-senang
2SK3078A(TE12L,F)
Toshiba Semiconductor and Storage

2SK3078A(TE12L,F)

bahagian bahagian: 6184

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 8dB, Voltan - Ujian: 4.5V, Peringkat Semasa: 500mA,

Bersenang-senang
2SK3074TE12LF
Toshiba Semiconductor and Storage

2SK3074TE12LF

bahagian bahagian: 6224

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 14.9dB, Voltan - Ujian: 9.6V, Peringkat Semasa: 1A,

Bersenang-senang
2SK3075(TE12L,Q)
Toshiba Semiconductor and Storage

2SK3075(TE12L,Q)

bahagian bahagian: 9920

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 11.7dB, Voltan - Ujian: 9.6V, Peringkat Semasa: 5A,

Bersenang-senang