Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

Diodes Incorporated

DMP2066LSN-7

bahagian bahagian: 101748

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V,

Senarai harapan

Diodes Incorporated

DMN3023L-7

bahagian bahagian: 168891

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 4A, 10V,

Senarai harapan

Diodes Incorporated

DMG3414U-7

bahagian bahagian: 198770

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V,

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Diodes Incorporated

DMN3730UFB4-7

bahagian bahagian: 189887

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 750mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V,

Senarai harapan

Diodes Incorporated

ZXMN3A14FTA

bahagian bahagian: 121912

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.2A, 10V,

Senarai harapan

Diodes Incorporated

ZXM61P02FTA

bahagian bahagian: 155512

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 4.5V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V,

Senarai harapan

Diodes Incorporated

DMP4047LFDE-7

bahagian bahagian: 144880

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4.4A, 10V,

Senarai harapan

Diodes Incorporated

DMP510DL-7

bahagian bahagian: 157287

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 100mA, 5V,

Senarai harapan

Diodes Incorporated

ZXMP7A17KTC

bahagian bahagian: 199674

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 70V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2.1A, 10V,

Senarai harapan

Diodes Incorporated

DMN3033LSN-7

bahagian bahagian: 105580

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V,

Senarai harapan

Diodes Incorporated

DMN53D0U-7

bahagian bahagian: 141394

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 5V, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V,

Senarai harapan

Diodes Incorporated

DMG8N65SCT

bahagian bahagian: 57649

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.3 Ohm @ 4A, 10V,

Senarai harapan

Diodes Incorporated

DMT6016LFDF-7

bahagian bahagian: 171857

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 10A, 10V,

Senarai harapan

Diodes Incorporated

ZXM61P03FTA

bahagian bahagian: 112715

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 600mA, 10V,

Senarai harapan

Diodes Incorporated

DMN24H3D5L-7

bahagian bahagian: 119103

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 480mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.3V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 300mA, 10V,

Senarai harapan

Diodes Incorporated

DMG7N65SCTI

bahagian bahagian: 69223

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V,

Senarai harapan

Diodes Incorporated

ZVP4525ZTA

bahagian bahagian: 180913

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 205mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 Ohm @ 200mA, 10V,

Senarai harapan

Diodes Incorporated

ZXMN6A08E6TA

bahagian bahagian: 156110

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 4.8A, 10V,

Senarai harapan

Diodes Incorporated

DMN2004TK-7

bahagian bahagian: 163787

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V,

Senarai harapan

Diodes Incorporated

DMN4020LFDE-7

bahagian bahagian: 125500

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V,

Senarai harapan

Diodes Incorporated

DMN6068SE-13

bahagian bahagian: 182406

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 12A, 10V,

Senarai harapan

Diodes Incorporated

DMP2123L-7

bahagian bahagian: 172851

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V,

Senarai harapan

Diodes Incorporated

DMN53D0LQ-7

bahagian bahagian: 114596

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V,

Senarai harapan

Diodes Incorporated

DMP2004K-7

bahagian bahagian: 169057

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V,

Senarai harapan

Diodes Incorporated

DMN80H2D0SCTI

bahagian bahagian: 52836

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 2.5A, 10V,

Senarai harapan

Diodes Incorporated

MMBF170-7-F

bahagian bahagian: 155222

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Senarai harapan

Diodes Incorporated

DMP32D4S-13

bahagian bahagian: 116642

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 300mA, 10V,

Senarai harapan

Diodes Incorporated

DMG7N65SJ3

bahagian bahagian: 80955

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V,

Senarai harapan

Diodes Incorporated

DMN63D8LW-7

bahagian bahagian: 157543

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 380mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V,

Senarai harapan

Diodes Incorporated

DMN32D2LFB4-7

bahagian bahagian: 115469

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V,

Senarai harapan

Diodes Incorporated

DMG7N65SCT

bahagian bahagian: 66805

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V,

Senarai harapan

Diodes Incorporated

DMN2046U-7

bahagian bahagian: 154187

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V,

Senarai harapan

Diodes Incorporated

DMN3150LW-7

bahagian bahagian: 130756

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 28V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 88 mOhm @ 1.6A, 4.5V,

Senarai harapan

Diodes Incorporated

DMN3042L-7

bahagian bahagian: 141341

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 26.5 mOhm @ 5.8A, 10V,

Senarai harapan

Diodes Incorporated

ZXMN2B01FTA

bahagian bahagian: 191397

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V,

Senarai harapan

Diodes Incorporated

VN10LFTA

bahagian bahagian: 175520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Senarai harapan

1420

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