Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Bujang

  • Rumah
  •  
  • Transistor - FET, MOSFET - Bujang
DMN2004K-7
Diodes Incorporated

DMN2004K-7

bahagian bahagian: 155745

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V,

Senarai harapan
DMP2160UW-7
Diodes Incorporated

DMP2160UW-7

bahagian bahagian: 199493

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V,

Senarai harapan
DMG1012T-7
Diodes Incorporated

DMG1012T-7

bahagian bahagian: 199063

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V,

Senarai harapan
DMN3404L-7
Diodes Incorporated

DMN3404L-7

bahagian bahagian: 173192

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5.8A, 10V,

Senarai harapan
ZXMP6A13FTA
Diodes Incorporated

ZXMP6A13FTA

bahagian bahagian: 115075

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 900mA, 10V,

Senarai harapan
DMN2990UFA-7B
Diodes Incorporated

DMN2990UFA-7B

bahagian bahagian: 183183

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 510mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V,

Senarai harapan
DMN63D8LW-13
Diodes Incorporated

DMN63D8LW-13

bahagian bahagian: 156331

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 380mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V,

Senarai harapan
DMP2008UFG-7
Diodes Incorporated

DMP2008UFG-7

bahagian bahagian: 160456

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 12A, 4.5V,

Senarai harapan
DMN2300UFB4-7B
Diodes Incorporated

DMN2300UFB4-7B

bahagian bahagian: 128741

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 300mA, 4.5V,

Senarai harapan
DMN1019UFDE-7
Diodes Incorporated

DMN1019UFDE-7

bahagian bahagian: 172216

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V,

Senarai harapan
DMN65D8L-7
Diodes Incorporated

DMN65D8L-7

bahagian bahagian: 181374

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 115mA, 10V,

Senarai harapan
DMN3065LW-7
Diodes Incorporated

DMN3065LW-7

bahagian bahagian: 170419

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 4A, 10V,

Senarai harapan
DMG3420U-7
Diodes Incorporated

DMG3420U-7

bahagian bahagian: 123813

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.47A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 10V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 10V,

Senarai harapan
DMG2302UK-7
Diodes Incorporated

DMG2302UK-7

bahagian bahagian: 169896

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.6A, 4.5V,

Senarai harapan
DMG2307L-7
Diodes Incorporated

DMG2307L-7

bahagian bahagian: 136538

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 10V,

Senarai harapan
DMN60H4D5SK3-13
Diodes Incorporated

DMN60H4D5SK3-13

bahagian bahagian: 129490

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 1A, 10V,

Senarai harapan