Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

Diodes Incorporated

ZXMD63N03XTC

bahagian bahagian: 2755

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

Senarai harapan

Diodes Incorporated

ZXMN6A11DN8TC

bahagian bahagian: 2682

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

ZXMC4A16DN8TC

bahagian bahagian: 2674

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), 4.7A (Ta), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, 60 mOhm @ 3.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250mA (Min),

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Diodes Incorporated

DMN2041UFDB-7

bahagian bahagian: 2948

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Diodes Incorporated

ZXMD65N03N8TA

bahagian bahagian: 2627

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A,

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Diodes Incorporated

DMC3018LSD-13

bahagian bahagian: 2789

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A, 6A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

ZXMC3A18DN8TA

bahagian bahagian: 2765

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.8A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

ZVN4206NTA

bahagian bahagian: 2720

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V,

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Diodes Incorporated

ZXMD65P02N8TA

bahagian bahagian: 2712

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

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Diodes Incorporated

DMN5L06V-7

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

ZXMD63N02XTC

bahagian bahagian: 2710

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMC62D0SVQ-7

bahagian bahagian: 24308

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 571mA (Ta), 304mA (Ta), Rds On (Maks) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, 6 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Diodes Incorporated

ZXMC3A17DN8TC

bahagian bahagian: 2756

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3.4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DI9942T

bahagian bahagian: 2655

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A,

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Diodes Incorporated

ZXMHC10A07T8TA

bahagian bahagian: 83530

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, 800mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Diodes Incorporated

DI9945T

bahagian bahagian: 2659

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V,

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Diodes Incorporated

DI9952T

bahagian bahagian: 2661

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A,

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Diodes Incorporated

DMN2040LSD-13

bahagian bahagian: 2799

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

ZXMD65N02N8TA

bahagian bahagian: 2663

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

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Diodes Incorporated

ZDM4206NTA

bahagian bahagian: 2634

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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Diodes Incorporated

DMN32D2LDF-7

bahagian bahagian: 157687

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

ZXMN6A09DN8TC

bahagian bahagian: 2680

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMN3A06DN8TC

bahagian bahagian: 2755

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMP58D0SV-7

bahagian bahagian: 194639

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 100mA, 5V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMN26D0UDJ-7

bahagian bahagian: 112847

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 240mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1.05V @ 250µA,

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Diodes Incorporated

DMG6602SVTQ-7

bahagian bahagian: 143884

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

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Diodes Incorporated

DMN65D8LDW-7

bahagian bahagian: 141176

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 115mA, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMN53D0LDW-7

bahagian bahagian: 110016

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 360mA, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

ZXMD63C02XTA

bahagian bahagian: 30114

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

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Diodes Incorporated

DMG1024UV-7

bahagian bahagian: 127188

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.38A, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

ZDM4306NTA

bahagian bahagian: 2658

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 330 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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Diodes Incorporated

DMC1018UPD-13

bahagian bahagian: 180420

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 6.9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

ZXMD63P02XTA

bahagian bahagian: 110973

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

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Diodes Incorporated

DMC21D1UDA-7B

bahagian bahagian: 21525

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 455mA (Ta), 328mA (Ta), Rds On (Maks) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMG9926UDM-7

bahagian bahagian: 140078

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Diodes Incorporated

DMN2400UV-7

bahagian bahagian: 180036

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.33A, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

Senarai harapan

413

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