Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

Diodes Incorporated

ZXMN3A04DN8TA

bahagian bahagian: 67976

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 12.6A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMN61D8LVTQ-13

bahagian bahagian: 164672

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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Diodes Incorporated

DMP2004DMK-7

bahagian bahagian: 161101

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 550mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN3032LFDBQ-7

bahagian bahagian: 158335

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMC2700UDMQ-7

bahagian bahagian: 273

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.34A (Ta), 1.14A (Ta), Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, 700 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2040LTS-13

bahagian bahagian: 129560

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A (Ta), Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

DMN1029UFDB-13

bahagian bahagian: 165180

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMP2060UFDB-7

bahagian bahagian: 104528

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Diodes Incorporated

DMC25D0UVT-7

bahagian bahagian: 145606

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, 3.2A, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMN4031SSD-13

bahagian bahagian: 188923

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN601DWKQ-7

bahagian bahagian: 16267

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA (Ta), Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Diodes Incorporated

DMP1046UFDB-13

bahagian bahagian: 131033

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2036UCB4-7

bahagian bahagian: 9926

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard,

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Diodes Incorporated

ZXMC4559DN8TA

bahagian bahagian: 76154

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, 2.6A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMC3028LSD-13

bahagian bahagian: 124769

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 6.8A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN1003UCA6-7

bahagian bahagian: 9998

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

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Diodes Incorporated

DMN63D1LDW-13

bahagian bahagian: 120600

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Diodes Incorporated

DMT3020LFDB-7

bahagian bahagian: 173648

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMC4559DN8TC

bahagian bahagian: 98680

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, 2.6A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMN2028UFU-13

bahagian bahagian: 184757

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMG8601UFG-7

bahagian bahagian: 139933

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.05V @ 250µA,

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Diodes Incorporated

DMC1030UFDBQ-7

bahagian bahagian: 120462

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMP2200UDW-13

bahagian bahagian: 108457

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

DMN63D1LDW-7

bahagian bahagian: 176531

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Diodes Incorporated

DMN4031SSDQ-13

bahagian bahagian: 188739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN3055LFDB-13

bahagian bahagian: 174963

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Rds On (Maks) @ Id, Vgs: 40 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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DMHC3025LSDQ-13

Diodes Incorporated

DMHC3025LSDQ-13

bahagian bahagian: 190261

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.2A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMP1055UFDB-7

bahagian bahagian: 154659

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC3400SDW-13

bahagian bahagian: 156092

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 650mA, 450mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 590mA, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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Diodes Incorporated

DMT6018LDR-7

bahagian bahagian: 150011

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.8A (Ta), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN1150UFL3-7

bahagian bahagian: 127702

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC1029UFDB-13

bahagian bahagian: 120593

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, 3.8A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN32D4SDW-13

bahagian bahagian: 172309

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 650mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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Diodes Incorporated

DMN4026SSD-13

bahagian bahagian: 191283

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMT6018LDR-13

bahagian bahagian: 215

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.8A (Ta), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMTH4007SPD-13

bahagian bahagian: 135932

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.2A, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

Senarai harapan

413

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