Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 1

EPC2105ENGRT

bahagian bahagian: 13745

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2.5mA,

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EPC

EPC2100

bahagian bahagian: 18949

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

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EPC

EPC2104ENGRT

bahagian bahagian: 13673

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5.5mA,

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EPC

EPC2101ENGRT

bahagian bahagian: 13969

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2mA,

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EPC

EPC2103ENGRT

bahagian bahagian: 13895

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2111ENGRT

bahagian bahagian: 43248

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5mA,

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EPC

EPC2101ENG

bahagian bahagian: 2948

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2mA,

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EPC

EPC2100ENGRT

bahagian bahagian: 14216

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

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EPC

EPC2106ENGRT

bahagian bahagian: 88131

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 600µA,

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EPC

EPC2102ENGRT

bahagian bahagian: 14073

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tj), Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2103

bahagian bahagian: 23026

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2105

bahagian bahagian: 24303

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

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EPC

EPC2100ENG

bahagian bahagian: 2900

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

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EPC

EPC2105ENG

bahagian bahagian: 2911

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2.5mA,

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EPC

EPC2103ENG

bahagian bahagian: 2868

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2104

bahagian bahagian: 24318

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5.5mA,

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EPC

EPC2106

bahagian bahagian: 24307

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 600µA,

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EPC

EPC2102ENG

bahagian bahagian: 2960

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2102

bahagian bahagian: 24374

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2104ENG

bahagian bahagian: 2913

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5.5mA,

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EPC

EPC2107ENGRT

bahagian bahagian: 82626

Jenis FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Maks) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

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EPC

EPC2107

bahagian bahagian: 79571

Jenis FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Maks) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

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EPC

EPC2111

bahagian bahagian: 48430

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5mA,

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EPC

EPC2110ENGRT

bahagian bahagian: 67578

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 120V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 700µA,

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EPC

EPC2101

bahagian bahagian: 21570

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 3mA, 2.5V @ 12mA,

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EPC

EPC2110

bahagian bahagian: 26911

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 120V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 700µA,

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EPC

EPC2108

bahagian bahagian: 83651

Jenis FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

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