Transistor - FET, MOSFET - Bujang

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Transistor - FET, MOSFET - Bujang

EPC2001

bahagian bahagian: 18487

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 5V,

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EPC2049ENGRT

bahagian bahagian: 4397

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 15A, 5V,

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EPC2021

bahagian bahagian: 14286

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 29A, 5V,

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EPC2025

bahagian bahagian: 1945

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 3A, 5V,

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EPC2031

bahagian bahagian: 8638

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

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EPC2018

bahagian bahagian: 8926

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 5V,

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EPC2016

bahagian bahagian: 50068

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 11A, 5V,

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EPC2051ENGRT

bahagian bahagian: 10801

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 5V,

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EPC8004

bahagian bahagian: 28614

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 500mA, 5V,

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EPC8009

bahagian bahagian: 27880

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 65V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 500mA, 5V,

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EPC2030ENGRT

bahagian bahagian: 16295

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

Senarai harapan

EPC2007

bahagian bahagian: 69589

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 5V,

Senarai harapan

EPC2015

bahagian bahagian: 18703

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 33A, 5V,

Senarai harapan

EPC2031ENGRT

bahagian bahagian: 17048

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

Senarai harapan

EPC2012

bahagian bahagian: 54098

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3A, 5V,

Senarai harapan

EPC2010

bahagian bahagian: 9929

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 5V,

Senarai harapan

EPC2022

bahagian bahagian: 14027

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 25A, 5V,

Senarai harapan

EPC2024

bahagian bahagian: 14687

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 1.5 mOhm @ 37A, 5V,

Senarai harapan

EPC2033

bahagian bahagian: 13722

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Senarai harapan

EPC2032

bahagian bahagian: 16483

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 30A, 5V,

Senarai harapan

EPC2020

bahagian bahagian: 14515

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 31A, 5V,

Senarai harapan

EPC2029

bahagian bahagian: 16856

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 30A, 5V,

Senarai harapan

EPC2034

bahagian bahagian: 7981

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 20A, 5V,

Senarai harapan

EPC2035

bahagian bahagian: 195456

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 1A, 5V,

Senarai harapan

EPC2023

bahagian bahagian: 18953

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Ta), Rds On (Maks) @ Id, Vgs: 1.3 mOhm @ 40A, 5V,

Senarai harapan

EPC2015C

bahagian bahagian: 30169

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 33A, 5V,

Senarai harapan

EPC2014

bahagian bahagian: 74091

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 5V,

Senarai harapan

EPC2030

bahagian bahagian: 22960

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

Senarai harapan

EPC8010

bahagian bahagian: 46864

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 500mA, 5V,

Senarai harapan

EPC2045ENGRT

bahagian bahagian: 26260

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 16A, 5V,

Senarai harapan

EPC2010C

bahagian bahagian: 17919

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 12A, 5V,

Senarai harapan

EPC2012C

bahagian bahagian: 54040

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3A, 5V,

Senarai harapan

EPC2001C

bahagian bahagian: 31126

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Senarai harapan

EPC2202

bahagian bahagian: 48425

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11A, 5V,

Senarai harapan

EPC2019

bahagian bahagian: 37744

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 7A, 5V,

Senarai harapan

EPC2007C

bahagian bahagian: 74756

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 5V,

Senarai harapan

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