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MR4A08BCMA35
Everspin Technologies Inc.

MR4A08BCMA35

bahagian bahagian: 2109

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR4A08BMA35
Everspin Technologies Inc.

MR4A08BMA35

bahagian bahagian: 2272

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR4A16BCMA35R
Everspin Technologies Inc.

MR4A16BCMA35R

bahagian bahagian: 2946

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR4A08BCYS35
Everspin Technologies Inc.

MR4A08BCYS35

bahagian bahagian: 2131

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BCYS35
Everspin Technologies Inc.

MR4A16BCYS35

bahagian bahagian: 2120

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BCMA35
Everspin Technologies Inc.

MR4A16BCMA35

bahagian bahagian: 2128

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BMA35
Everspin Technologies Inc.

MR4A16BMA35

bahagian bahagian: 2205

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BCYS35R
Everspin Technologies Inc.

MR4A16BCYS35R

bahagian bahagian: 2969

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BMA35R
Everspin Technologies Inc.

MR4A16BMA35R

bahagian bahagian: 3209

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A08BCMA35R
Everspin Technologies Inc.

MR4A08BCMA35R

bahagian bahagian: 2941

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A08BMA35R
Everspin Technologies Inc.

MR4A08BMA35R

bahagian bahagian: 3193

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A08BCYS35R
Everspin Technologies Inc.

MR4A08BCYS35R

bahagian bahagian: 2936

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BYS35
Everspin Technologies Inc.

MR4A16BYS35

bahagian bahagian: 2288

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR25H40MDF
Everspin Technologies Inc.

MR25H40MDF

bahagian bahagian: 4036

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 40MHz,

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MR4A08BYS35
Everspin Technologies Inc.

MR4A08BYS35

bahagian bahagian: 2220

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AVYS35
Everspin Technologies Inc.

MR2A16AVYS35

bahagian bahagian: 2698

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AVMA35
Everspin Technologies Inc.

MR2A16AVMA35

bahagian bahagian: 2651

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR2A16ACMA35
Everspin Technologies Inc.

MR2A16ACMA35

bahagian bahagian: 3023

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16ACYS35
Everspin Technologies Inc.

MR2A16ACYS35

bahagian bahagian: 3047

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AVMA35R
Everspin Technologies Inc.

MR2A16AVMA35R

bahagian bahagian: 3824

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08ACYS35
Everspin Technologies Inc.

MR2A08ACYS35

bahagian bahagian: 3049

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR4A16BYS35R
Everspin Technologies Inc.

MR4A16BYS35R

bahagian bahagian: 3172

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08ACMA35
Everspin Technologies Inc.

MR2A08ACMA35

bahagian bahagian: 3074

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08AYS35
Everspin Technologies Inc.

MR2A08AYS35

bahagian bahagian: 3343

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR25H40MDFR
Everspin Technologies Inc.

MR25H40MDFR

bahagian bahagian: 5891

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MR2A08AMYS35R
Everspin Technologies Inc.

MR2A08AMYS35R

bahagian bahagian: 3635

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AMA35
Everspin Technologies Inc.

MR2A16AMA35

bahagian bahagian: 3314

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AMYS35R
Everspin Technologies Inc.

MR2A16AMYS35R

bahagian bahagian: 3625

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AMA35R
Everspin Technologies Inc.

MR2A16AMA35R

bahagian bahagian: 4676

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AYS35
Everspin Technologies Inc.

MR2A16AYS35

bahagian bahagian: 3300

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08AMA35R
Everspin Technologies Inc.

MR2A08AMA35R

bahagian bahagian: 4722

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08ACMA35R
Everspin Technologies Inc.

MR2A08ACMA35R

bahagian bahagian: 4344

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16ACMA35R
Everspin Technologies Inc.

MR2A16ACMA35R

bahagian bahagian: 4318

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AMYS35
Everspin Technologies Inc.

MR2A16AMYS35

bahagian bahagian: 3373

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08AMA35
Everspin Technologies Inc.

MR2A08AMA35

bahagian bahagian: 4378

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16AVYS35R
Everspin Technologies Inc.

MR2A16AVYS35R

bahagian bahagian: 3774

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan