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MR4A08BYS35R
Everspin Technologies Inc.

MR4A08BYS35R

bahagian bahagian: 3120

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR2A08AMYS35
Everspin Technologies Inc.

MR2A08AMYS35

bahagian bahagian: 3372

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR25H40CDC
Everspin Technologies Inc.

MR25H40CDC

bahagian bahagian: 5195

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MR20H40CDF
Everspin Technologies Inc.

MR20H40CDF

bahagian bahagian: 4347

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 50MHz,

Senarai harapan
MR2A08ACYS35R
Everspin Technologies Inc.

MR2A08ACYS35R

bahagian bahagian: 4312

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR2A16AYS35R
Everspin Technologies Inc.

MR2A16AYS35R

bahagian bahagian: 4540

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A08AYS35R
Everspin Technologies Inc.

MR2A08AYS35R

bahagian bahagian: 4595

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR2A16ACYS35R
Everspin Technologies Inc.

MR2A16ACYS35R

bahagian bahagian: 4271

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR25H40CDF
Everspin Technologies Inc.

MR25H40CDF

bahagian bahagian: 5178

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MR256A08BSO35R
Everspin Technologies Inc.

MR256A08BSO35R

bahagian bahagian: 5055

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR20H40CDFR
Everspin Technologies Inc.

MR20H40CDFR

bahagian bahagian: 6410

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 50MHz,

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MR0A16AVMA35R
Everspin Technologies Inc.

MR0A16AVMA35R

bahagian bahagian: 7143

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR20H40DF
Everspin Technologies Inc.

MR20H40DF

bahagian bahagian: 7092

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 50MHz,

Senarai harapan
MR0A08BSO35
Everspin Technologies Inc.

MR0A08BSO35

bahagian bahagian: 8800

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

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MR20H40DFR
Everspin Technologies Inc.

MR20H40DFR

bahagian bahagian: 7150

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 50MHz,

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MR0D08BMA45
Everspin Technologies Inc.

MR0D08BMA45

bahagian bahagian: 6312

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

Senarai harapan
MR0A16AVMA35
Everspin Technologies Inc.

MR0A16AVMA35

bahagian bahagian: 6821

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A16ACYS35
Everspin Technologies Inc.

MR0A16ACYS35

bahagian bahagian: 5925

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A16ACMA35
Everspin Technologies Inc.

MR0A16ACMA35

bahagian bahagian: 5961

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A16AMYS35R
Everspin Technologies Inc.

MR0A16AMYS35R

bahagian bahagian: 5945

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A16AMYS35
Everspin Technologies Inc.

MR0A16AMYS35

bahagian bahagian: 5660

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR25H40CDCR
Everspin Technologies Inc.

MR25H40CDCR

bahagian bahagian: 7730

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MR0A16AYS35
Everspin Technologies Inc.

MR0A16AYS35

bahagian bahagian: 6355

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0D08BMA45R
Everspin Technologies Inc.

MR0D08BMA45R

bahagian bahagian: 8875

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

Senarai harapan
MR0A08BCSO35R
Everspin Technologies Inc.

MR0A08BCSO35R

bahagian bahagian: 3075

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR25H40CDFR
Everspin Technologies Inc.

MR25H40CDFR

bahagian bahagian: 7694

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MR0A16ACMA35R
Everspin Technologies Inc.

MR0A16ACMA35R

bahagian bahagian: 8325

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A08BCSO35
Everspin Technologies Inc.

MR0A08BCSO35

bahagian bahagian: 3017

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR256A08BCSO35
Everspin Technologies Inc.

MR256A08BCSO35

bahagian bahagian: 3064

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A08BYS35
Everspin Technologies Inc.

MR0A08BYS35

bahagian bahagian: 6281

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR256A08BCSO35R
Everspin Technologies Inc.

MR256A08BCSO35R

bahagian bahagian: 385

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A16AMA35R
Everspin Technologies Inc.

MR0A16AMA35R

bahagian bahagian: 8881

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A08BSO35R
Everspin Technologies Inc.

MR0A08BSO35R

bahagian bahagian: 8910

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0DL08BMA45R
Everspin Technologies Inc.

MR0DL08BMA45R

bahagian bahagian: 8487

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

Senarai harapan
MR256A08BSO35
Everspin Technologies Inc.

MR256A08BSO35

bahagian bahagian: 8920

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan
MR0A16AVYS35R
Everspin Technologies Inc.

MR0A16AVYS35R

bahagian bahagian: 7108

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 35ns,

Senarai harapan