Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Ingatan

MB85RC16VPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC16VPNF-G-JNERE1

bahagian bahagian: 8652

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85R256GPF-G-BND-ERE1
Fujitsu Electronics America, Inc.

MB85R256GPF-G-BND-ERE1

bahagian bahagian: 5900

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R256GPF-G-BNDE1
Fujitsu Electronics America, Inc.

MB85R256GPF-G-BNDE1

bahagian bahagian: 8589

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R256FPF-G-BNDE1
Fujitsu Electronics America, Inc.

MB85R256FPF-G-BNDE1

bahagian bahagian: 5898

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R256FPF-G-BND-ERE1
Fujitsu Electronics America, Inc.

MB85R256FPF-G-BND-ERE1

bahagian bahagian: 8573

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85RC16VPNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RC16VPNF-G-JNE1

bahagian bahagian: 83162

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RS256BPNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS256BPNF-G-JNE1

bahagian bahagian: 4627

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 33MHz,

Senarai harapan
MB85RS128BPNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS128BPNF-G-JNE1

bahagian bahagian: 24522

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 33MHz,

Senarai harapan
MB85R4002ANC-GE1
Fujitsu Electronics America, Inc.

MB85R4002ANC-GE1

bahagian bahagian: 5910

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R4001ANC-GE1
Fujitsu Electronics America, Inc.

MB85R4001ANC-GE1

bahagian bahagian: 5917

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R4M2TFN-G-ASE1
Fujitsu Electronics America, Inc.

MB85R4M2TFN-G-ASE1

bahagian bahagian: 5602

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R1001ANC-GE1
Fujitsu Electronics America, Inc.

MB85R1001ANC-GE1

bahagian bahagian: 8682

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85RS2MTPH-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS2MTPH-G-JNE1

bahagian bahagian: 12664

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 2Mb (256K x 8), Kekerapan Jam: 25MHz,

Senarai harapan
MB85RS2MTPF-G-JNERE2
Fujitsu Electronics America, Inc.

MB85RS2MTPF-G-JNERE2

bahagian bahagian: 13616

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 2Mb (256K x 8), Kekerapan Jam: 25MHz,

Senarai harapan
MB85RQ4MLPF-G-BCERE1
Fujitsu Electronics America, Inc.

MB85RQ4MLPF-G-BCERE1

bahagian bahagian: 9454

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 108MHz,

Senarai harapan
MB85RS1MTPH-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS1MTPH-G-JNE1

bahagian bahagian: 12974

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MB85R1002ANC-GE1
Fujitsu Electronics America, Inc.

MB85R1002ANC-GE1

bahagian bahagian: 11659

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85RS2MTAPH-G-JNE2
Fujitsu Electronics America, Inc.

MB85RS2MTAPH-G-JNE2

bahagian bahagian: 1254

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 2Mb (256K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MB85RS2MTAPNF-G-BDERE1
Fujitsu Electronics America, Inc.

MB85RS2MTAPNF-G-BDERE1

bahagian bahagian: 14925

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 2Mb (256K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MB85R256FPNF-G-JNERE2
Fujitsu Electronics America, Inc.

MB85R256FPNF-G-JNERE2

bahagian bahagian: 160

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85R256FPFCN-G-BNDE1
Fujitsu Electronics America, Inc.

MB85R256FPFCN-G-BNDE1

bahagian bahagian: 16052

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MB85AS4MTPF-G-BCERE1
Fujitsu Electronics America, Inc.

MB85AS4MTPF-G-BCERE1

bahagian bahagian: 17745

Jenis Ingatan: Non-Volatile, Format Memori: RAM, Teknologi: ReRAM (Resistive RAM), Saiz Ingatan: 4Mb (512K x 8), Kekerapan Jam: 5MHz, Tulis Masa Kitaran - Perkataan, Halaman: 17ms,

Senarai harapan
MB85RC512TPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC512TPNF-G-JNERE1

bahagian bahagian: 21629

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 512Kb (64K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MB85RC1MTPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC1MTPNF-G-JNERE1

bahagian bahagian: 18230

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MB85RS1MTPW-G-APEWE1
Fujitsu Electronics America, Inc.

MB85RS1MTPW-G-APEWE1

bahagian bahagian: 18188

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MB85RS1MTPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS1MTPNF-G-JNERE1

bahagian bahagian: 18207

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MB85RS512TPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS512TPNF-G-JNERE1

bahagian bahagian: 21656

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 512Kb (64K x 8), Kekerapan Jam: 30MHz,

Senarai harapan
MB85RS256TYPNF-GS-BCERE1
Fujitsu Electronics America, Inc.

MB85RS256TYPNF-GS-BCERE1

bahagian bahagian: 205

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 33MHz,

Senarai harapan
MB85RS128BPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS128BPNF-G-JNERE1

bahagian bahagian: 36051

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 33MHz,

Senarai harapan
MB85RC256VPF-G-JNERE2
Fujitsu Electronics America, Inc.

MB85RC256VPF-G-JNERE2

bahagian bahagian: 32025

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC128APNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RC128APNF-G-JNE1

bahagian bahagian: 28871

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC256VPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC256VPNF-G-JNERE1

bahagian bahagian: 31777

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RS256APNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS256APNF-G-JNE1

bahagian bahagian: 25238

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 25MHz,

Senarai harapan
MB85RS256BPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS256BPNF-G-JNERE1

bahagian bahagian: 31758

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 33MHz,

Senarai harapan
MB85RS128APNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS128APNF-G-JNE1

bahagian bahagian: 34694

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 25MHz,

Senarai harapan
MB85RC128APNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC128APNF-G-JNERE1

bahagian bahagian: 42528

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 1MHz,

Senarai harapan