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MB85RC64APNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC64APNF-G-JNERE1

bahagian bahagian: 62916

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC64APNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RC64APNF-G-JNE1

bahagian bahagian: 44700

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC128PNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RC128PNF-G-JNE1

bahagian bahagian: 40709

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 400kHz,

Senarai harapan
MB85RC64PNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC64PNF-G-JNERE1

bahagian bahagian: 62994

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 400kHz,

Senarai harapan
MB85RS128TYPNF-GS-BCERE1
Fujitsu Electronics America, Inc.

MB85RS128TYPNF-GS-BCERE1

bahagian bahagian: 222

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 128Kb (16K x 8), Kekerapan Jam: 33MHz,

Senarai harapan
MB85RS64PNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS64PNF-G-JNERE1

bahagian bahagian: 16256

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 20MHz,

Senarai harapan
MB85RC64VPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC64VPNF-G-JNERE1

bahagian bahagian: 60324

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RS64VPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS64VPNF-G-JNERE1

bahagian bahagian: 60388

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 20MHz,

Senarai harapan
MB85RS64PNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RS64PNF-G-JNE1

bahagian bahagian: 32850

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 20MHz,

Senarai harapan
MB85RC64PNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RC64PNF-G-JNE1

bahagian bahagian: 44678

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 400kHz,

Senarai harapan
MB85RS16PNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS16PNF-G-JNERE1

bahagian bahagian: 89231

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 20MHz,

Senarai harapan
MB85RC64TAPN-G-AMEWE1
Fujitsu Electronics America, Inc.

MB85RC64TAPN-G-AMEWE1

bahagian bahagian: 68832

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MB85RC04VPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC04VPNF-G-JNERE1

bahagian bahagian: 151522

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 4Kb (512 x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RS16NPN-G-AMEWE1
Fujitsu Electronics America, Inc.

MB85RS16NPN-G-AMEWE1

bahagian bahagian: 86358

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 20MHz,

Senarai harapan
MB85RC64TAPNF-G-BDERE1
Fujitsu Electronics America, Inc.

MB85RC64TAPNF-G-BDERE1

bahagian bahagian: 68888

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MB85RC16PN-G-AMERE1
Fujitsu Electronics America, Inc.

MB85RC16PN-G-AMERE1

bahagian bahagian: 91121

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC16VPNF-G-JNN1ERE1
Fujitsu Electronics America, Inc.

MB85RC16VPNF-G-JNN1ERE1

bahagian bahagian: 83146

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC16PNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RC16PNF-G-JNERE1

bahagian bahagian: 149

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RC16PNF-G-JNE1
Fujitsu Electronics America, Inc.

MB85RC16PNF-G-JNE1

bahagian bahagian: 95138

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan
MB85RS16NPNF-G-JNERE1
Fujitsu Electronics America, Inc.

MB85RS16NPNF-G-JNERE1

bahagian bahagian: 89204

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 20MHz,

Senarai harapan
MB85RC16VPNF-G-JNN1E1
Fujitsu Electronics America, Inc.

MB85RC16VPNF-G-JNN1E1

bahagian bahagian: 83108

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 16Kb (2K x 8), Kekerapan Jam: 1MHz,

Senarai harapan