Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 25

MBR2X060A120

bahagian bahagian: 3792

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST10040

bahagian bahagian: 1576

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA30020R

bahagian bahagian: 933

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST100150

bahagian bahagian: 1653

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR60020CT

bahagian bahagian: 970

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40030

bahagian bahagian: 1396

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30045CT

bahagian bahagian: 1411

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR20040CT

bahagian bahagian: 1223

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT50020

bahagian bahagian: 1075

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X120A04

bahagian bahagian: 3090

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 120A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR40020CTR

bahagian bahagian: 1219

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 125A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT100120(A)D

bahagian bahagian: 1932

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT300200

bahagian bahagian: 1527

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X060A100

bahagian bahagian: 3980

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50060CTR

bahagian bahagian: 1169

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT20080(A)D

bahagian bahagian: 1406

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30005R

bahagian bahagian: 1110

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST10080

bahagian bahagian: 1594

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR20030CTR

bahagian bahagian: 1551

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR60030CTR

bahagian bahagian: 939

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT500200

bahagian bahagian: 1086

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST16040

bahagian bahagian: 1522

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30060CT

bahagian bahagian: 1418

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR400200CTR

bahagian bahagian: 1590

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12035R

bahagian bahagian: 1858

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT400200R

bahagian bahagian: 3118

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30045R

bahagian bahagian: 1299

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR30010CT

bahagian bahagian: 1376

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT200100

bahagian bahagian: 1466

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40030CTR

bahagian bahagian: 1565

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12035CTR

bahagian bahagian: 1550

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR10060CTR

bahagian bahagian: 1583

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40030CT

bahagian bahagian: 1519

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12040CT

bahagian bahagian: 1537

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12080

bahagian bahagian: 1821

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT20080R

bahagian bahagian: 1417

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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