Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 25

MBRTA50020R

bahagian bahagian: 4212

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40045CTRL

bahagian bahagian: 4170

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF50020

bahagian bahagian: 4261

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF60045R

bahagian bahagian: 4274

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF50060R

bahagian bahagian: 4248

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 780mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF30035R

bahagian bahagian: 4209

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA50035R

bahagian bahagian: 4259

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF30030R

bahagian bahagian: 4272

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA80080R

bahagian bahagian: 4300

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 400A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF50080

bahagian bahagian: 4234

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST16045L

bahagian bahagian: 4169

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF300100

bahagian bahagian: 4200

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30020L

bahagian bahagian: 4441

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF200100R

bahagian bahagian: 4220

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF500200R

bahagian bahagian: 4298

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

UFT7340M

bahagian bahagian: 4323

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 70A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 35A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

UFT10020

bahagian bahagian: 4255

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF500200

bahagian bahagian: 4298

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURF40005R

bahagian bahagian: 4236

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60045L

bahagian bahagian: 4241

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF40040

bahagian bahagian: 4239

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

UFT14005

bahagian bahagian: 4268

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 70A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 70A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURF30010R

bahagian bahagian: 4231

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA80040L

bahagian bahagian: 4243

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 400A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA60020L

bahagian bahagian: 4231

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR60040CTL

bahagian bahagian: 4241

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA60035R

bahagian bahagian: 4249

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA60045

bahagian bahagian: 4302

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40030CTRL

bahagian bahagian: 4163

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR60020CTRL

bahagian bahagian: 4164

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA80045R

bahagian bahagian: 4480

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 400A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF60040

bahagian bahagian: 4285

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF60060

bahagian bahagian: 4279

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRTA80035RL

bahagian bahagian: 4234

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 400A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30020CTRL

bahagian bahagian: 4170

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30040L

bahagian bahagian: 4187

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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