Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 17

APT1002RBNG

bahagian bahagian: 6299

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

Senarai harapan

Microsemi Corporation

APT1001RBN

bahagian bahagian: 2149

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 5.5A, 10V,

Senarai harapan

Microsemi Corporation

APT80SM120S

bahagian bahagian: 2172

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 40A, 20V,

Senarai harapan

Microsemi Corporation

APT80SM120J

bahagian bahagian: 2121

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 40A, 20V,

Senarai harapan

Microsemi Corporation

APT80SM120B

bahagian bahagian: 2112

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 40A, 20V,

Senarai harapan

Microsemi Corporation

APT70SM70J

bahagian bahagian: 6264

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

Senarai harapan

Microsemi Corporation

APT70SM70S

bahagian bahagian: 2124

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

Senarai harapan

Microsemi Corporation

APT25SM120S

bahagian bahagian: 2166

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Rds On (Maks) @ Id, Vgs: 175 mOhm @ 10A, 20V,

Senarai harapan

Microsemi Corporation

APT70SM70B

bahagian bahagian: 2170

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

Senarai harapan

Microsemi Corporation

APT25SM120B

bahagian bahagian: 2084

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 10A, 20V,

Senarai harapan

Microsemi Corporation

APT7M120B

bahagian bahagian: 9685

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.5 Ohm @ 3A, 10V,

Senarai harapan

Microsemi Corporation

APT50MC120JCU2

bahagian bahagian: 704

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 71A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V,

Senarai harapan

Microsemi Corporation

APT40SM120S

bahagian bahagian: 2514

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 41A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Senarai harapan

Microsemi Corporation

APT40SM120B

bahagian bahagian: 1859

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 41A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Senarai harapan

Microsemi Corporation

APTML50UM90R020T1AG

bahagian bahagian: 1625

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 52A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 108 mOhm @ 26A, 10V,

Senarai harapan

Microsemi Corporation

APTM120DA30CT1G

bahagian bahagian: 1333

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 25A, 10V,

Senarai harapan

Microsemi Corporation

APTML20UM18R010T1AG

bahagian bahagian: 1604

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 109A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 50A, 10V,

Senarai harapan

Microsemi Corporation

APT14M100S

bahagian bahagian: 8207

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 880 mOhm @ 7A, 10V,

Senarai harapan

Microsemi Corporation

APT18M80S

bahagian bahagian: 1606

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 530 mOhm @ 9A, 10V,

Senarai harapan

Microsemi Corporation

APT12057JLL

bahagian bahagian: 1638

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 570 mOhm @ 10A, 10V,

Senarai harapan

Microsemi Corporation

APT53N60SC6

bahagian bahagian: 1604

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 25.8A, 10V,

Senarai harapan

Microsemi Corporation

APT12067JLL

bahagian bahagian: 1582

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 570 mOhm @ 10A, 10V,

Senarai harapan

Microsemi Corporation

APTM100DA18CT1G

bahagian bahagian: 6180

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 216 mOhm @ 33A, 10V,

Senarai harapan

Microsemi Corporation

APTC60DAM24CT1G

bahagian bahagian: 1620

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V,

Senarai harapan

Microsemi Corporation

APTC90DAM60CT1G

bahagian bahagian: 1078

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 59A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 52A, 10V,

Senarai harapan

Microsemi Corporation

APT33N90JCCU3

bahagian bahagian: 1668

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 26A, 10V,

Senarai harapan

Microsemi Corporation

APT33N90JCCU2

bahagian bahagian: 2047

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 26A, 10V,

Senarai harapan

Microsemi Corporation

APT20M120JCU3

bahagian bahagian: 2243

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 672 mOhm @ 14A, 10V,

Senarai harapan

Microsemi Corporation

APT20M120JCU2

bahagian bahagian: 2294

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 672 mOhm @ 14A, 10V,

Senarai harapan

Microsemi Corporation

APT5014SLLG/TR

bahagian bahagian: 6205

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 17.5A, 10V,

Senarai harapan

Microsemi Corporation

APT38N60SC6

bahagian bahagian: 1657

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 99 mOhm @ 18A, 10V,

Senarai harapan

Microsemi Corporation

APTML60U12R020T1AG

bahagian bahagian: 1584

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 22.5A, 10V,

Senarai harapan

Microsemi Corporation

APT30N60SC6

bahagian bahagian: 6234

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 14.5A, 10V,

Senarai harapan

Microsemi Corporation

APT17F100S

bahagian bahagian: 6915

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 780 mOhm @ 9A, 10V,

Senarai harapan

Microsemi Corporation

APT9F100S

bahagian bahagian: 1569

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1000V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 5A, 10V,

Senarai harapan

Microsemi Corporation

APT11F80S

bahagian bahagian: 1633

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 6A, 10V,

Senarai harapan