Transistor - Bipolar (BJT) - Susunan

Rumah
Transistor - Bipolar (BJT) - Susunan

Microsemi Corporation

2N2919U

bahagian bahagian: 1529

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N3810U

bahagian bahagian: 2166

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N2060L

bahagian bahagian: 2121

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan

Microsemi Corporation

2N6987

bahagian bahagian: 1248

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

2N6988

bahagian bahagian: 1523

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

2N2919L

bahagian bahagian: 2004

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N2920U

bahagian bahagian: 161

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N3838

bahagian bahagian: 1633

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 15mA, 150mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

2N2920L

bahagian bahagian: 2061

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N6990

bahagian bahagian: 1262

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

2N5795

bahagian bahagian: 1968

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

2N2920

bahagian bahagian: 2258

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N3810L

bahagian bahagian: 4091

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N2919

bahagian bahagian: 2136

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N3810

bahagian bahagian: 3259

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N6989

bahagian bahagian: 4437

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

2N3811L

bahagian bahagian: 4456

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N3811U

bahagian bahagian: 4453

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

2N3811

bahagian bahagian: 4521

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N6990

bahagian bahagian: 1050

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

SG2013J-883B

bahagian bahagian: 1020

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.9V @ 600µA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V,

Senarai harapan

Microsemi Corporation

SG2003J-JAN

bahagian bahagian: 4491

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

SG2803J-883B

bahagian bahagian: 4488

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JANTX2N6988

bahagian bahagian: 4551

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTXV2N3811L

bahagian bahagian: 4513

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

SG2003J-883B

bahagian bahagian: 4460

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JANTXV2N3810

bahagian bahagian: 1613

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JAN2N2919L

bahagian bahagian: 1921

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JAN2N6987

bahagian bahagian: 1383

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N3810U

bahagian bahagian: 1675

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N6987

bahagian bahagian: 1284

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTXV2N3810L

bahagian bahagian: 163

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N2920

bahagian bahagian: 1620

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V,

Senarai harapan

Microsemi Corporation

JANSR2N3810U

bahagian bahagian: 301

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 100µA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N2060L

bahagian bahagian: 980

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan

Microsemi Corporation

JAN2N2060L

bahagian bahagian: 1262

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan

89

«
1
2
3
»