Transistor - Bipolar (BJT) - Susunan

Rumah
Transistor - Bipolar (BJT) - Susunan

Microsemi Corporation

JANTX2N2919L

bahagian bahagian: 1721

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N2060L

bahagian bahagian: 835

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N2920L

bahagian bahagian: 1532

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JAN2N2920L

bahagian bahagian: 1944

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N4854U

bahagian bahagian: 4433

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 15mA, 150mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N5796U

bahagian bahagian: 4445

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANS2N2920

bahagian bahagian: 617

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N6989

bahagian bahagian: 1252

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N3811

bahagian bahagian: 4496

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N3811L

bahagian bahagian: 4476

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N2060

bahagian bahagian: 4482

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N5794U

bahagian bahagian: 4450

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 900mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

SG2003J

bahagian bahagian: 4422

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JANTXV2N3811

bahagian bahagian: 4485

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

SG2803J-DESC

bahagian bahagian: 4457

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JANTX2N6989

bahagian bahagian: 1403

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N5794

bahagian bahagian: 4465

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 900mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

SG2023J-DESC

bahagian bahagian: 4587

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 95V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JANTXV2N3810U

bahagian bahagian: 1474

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

SG2823J-883B

bahagian bahagian: 4475

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 95V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JANTX2N3811U

bahagian bahagian: 4430

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N6989U

bahagian bahagian: 4522

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N4854

bahagian bahagian: 586

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 15mA, 150mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JAN2N6989

bahagian bahagian: 1489

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N6990

bahagian bahagian: 4451

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

SG2823J

bahagian bahagian: 4440

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 95V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan

Microsemi Corporation

JAN2N2920U

bahagian bahagian: 1510

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N6988

bahagian bahagian: 1211

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTXV2N2919

bahagian bahagian: 1627

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JAN2N2919U

bahagian bahagian: 1524

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N2919U

bahagian bahagian: 1139

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N5794

bahagian bahagian: 231

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 900mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JAN2N6990

bahagian bahagian: 1554

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan

Microsemi Corporation

JANTX2N3810L

bahagian bahagian: 2505

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTX2N2920L

bahagian bahagian: 4518

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

Microsemi Corporation

JANTXV2N2920U

bahagian bahagian: 4499

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan

89

«
1
2
3
»