Transistor - IGBT - Modul | Produk Semikonduktor Diskrit | 16

APTGT75TA60PG

bahagian bahagian: 546

Jenis IGBT: Trench Field Stop, Konfigurasi: Three Phase, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 250W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGV100H60BTPG

bahagian bahagian: 5307

Jenis IGBT: NPT, Trench Field Stop, Konfigurasi: Boost Chopper, Full Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 150A, Kuasa - Maks: 340W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 100A,

Senarai harapan

Microsemi Corporation

APTGT75SK120T1G

bahagian bahagian: 531

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 110A, Kuasa - Maks: 357W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75SK120D1G

bahagian bahagian: 541

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 110A, Kuasa - Maks: 357W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DH60TG

bahagian bahagian: 521

Jenis IGBT: Trench Field Stop, Konfigurasi: Asymmetrical Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 250W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DSK60T3G

bahagian bahagian: 490

Jenis IGBT: Trench Field Stop, Konfigurasi: Dual Buck Chopper, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 250W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DH120TG

bahagian bahagian: 478

Jenis IGBT: Trench Field Stop, Konfigurasi: Asymmetrical Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 110A, Kuasa - Maks: 357W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DA170T1G

bahagian bahagian: 540

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 130A, Kuasa - Maks: 465W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DA170D1G

bahagian bahagian: 464

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 120A, Kuasa - Maks: 520W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DA120T1G

bahagian bahagian: 555

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 110A, Kuasa - Maks: 357W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75A170D1G

bahagian bahagian: 545

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 120A, Kuasa - Maks: 520W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75DA120D1G

bahagian bahagian: 548

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 110A, Kuasa - Maks: 357W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT75A120D1G

bahagian bahagian: 526

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 110A, Kuasa - Maks: 357W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 75A,

Senarai harapan

Microsemi Corporation

APTGT580U60D4G

bahagian bahagian: 526

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 760A, Kuasa - Maks: 1600W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 600A,

Senarai harapan

Microsemi Corporation

APTGT50TA170PG

bahagian bahagian: 482

Jenis IGBT: Trench Field Stop, Konfigurasi: Three Phase, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 70A, Kuasa - Maks: 310W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50SK170D1G

bahagian bahagian: 514

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 70A, Kuasa - Maks: 310W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DU170TG

bahagian bahagian: 476

Jenis IGBT: Trench Field Stop, Konfigurasi: Dual, Common Source, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 75A, Kuasa - Maks: 312W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DSK60T3G

bahagian bahagian: 541

Jenis IGBT: Trench Field Stop, Konfigurasi: Dual Buck Chopper, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 80A, Kuasa - Maks: 176W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DSK120T3G

bahagian bahagian: 552

Jenis IGBT: Trench Field Stop, Konfigurasi: Dual Buck Chopper, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 75A, Kuasa - Maks: 270W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DH60TG

bahagian bahagian: 528

Jenis IGBT: Trench Field Stop, Konfigurasi: Asymmetrical Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 80A, Kuasa - Maks: 176W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DA170T1G

bahagian bahagian: 3071

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 75A, Kuasa - Maks: 312W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DA170D1G

bahagian bahagian: 518

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 70A, Kuasa - Maks: 310W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50DA120D1G

bahagian bahagian: 496

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 75A, Kuasa - Maks: 270W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50A170D1G

bahagian bahagian: 535

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 70A, Kuasa - Maks: 310W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50A60T1G

bahagian bahagian: 520

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 80A, Kuasa - Maks: 176W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50A120D1G

bahagian bahagian: 494

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 75A, Kuasa - Maks: 270W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT50A120TG

bahagian bahagian: 483

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 75A, Kuasa - Maks: 277W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 50A,

Senarai harapan

Microsemi Corporation

APTGT450DU60G

bahagian bahagian: 517

Jenis IGBT: Trench Field Stop, Konfigurasi: Dual, Common Source, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 550A, Kuasa - Maks: 1750W, Vce (aktif) (Maks) @ Vge, Ic: 1.8V @ 15V, 450A,

Senarai harapan

Microsemi Corporation

APTGT400SK60D3G

bahagian bahagian: 472

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 500A, Kuasa - Maks: 1250W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 400A,

Senarai harapan

Microsemi Corporation

APTGT400DA120D3G

bahagian bahagian: 507

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 580A, Kuasa - Maks: 2100W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 400A,

Senarai harapan

Microsemi Corporation

APTGT400SK120D3G

bahagian bahagian: 463

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 580A, Kuasa - Maks: 2100W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 400A,

Senarai harapan

Microsemi Corporation

APTGT35SK120D1G

bahagian bahagian: 527

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 55A, Kuasa - Maks: 205W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 35A,

Senarai harapan

Microsemi Corporation

APTGT35H120T1G

bahagian bahagian: 522

Jenis IGBT: Trench Field Stop, Konfigurasi: Full Bridge Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 55A, Kuasa - Maks: 208W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 35A,

Senarai harapan

Microsemi Corporation

APTGT35A120D1G

bahagian bahagian: 463

Jenis IGBT: Trench Field Stop, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 55A, Kuasa - Maks: 205W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 35A,

Senarai harapan

Microsemi Corporation

APTGT35DA120D1G

bahagian bahagian: 481

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 55A, Kuasa - Maks: 205W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 35A,

Senarai harapan

Microsemi Corporation

APTGT30SK170D1G

bahagian bahagian: 507

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1700V, Semasa - Pemungut (Ic) (Maks): 45A, Kuasa - Maks: 210W, Vce (aktif) (Maks) @ Vge, Ic: 2.4V @ 15V, 30A,

Senarai harapan