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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
2N1717S
Microsemi Corporation

2N1717S

bahagian bahagian: 121

Senarai harapan
2N6249T1
Microsemi Corporation

2N6249T1

bahagian bahagian: 91

Senarai harapan
2N6300
Microsemi Corporation

2N6300

bahagian bahagian: 151

Senarai harapan
2N6286
Microsemi Corporation

2N6286

bahagian bahagian: 122

Senarai harapan
2N6277
Microsemi Corporation

2N6277

bahagian bahagian: 147

Senarai harapan
2N2102S
Microsemi Corporation

2N2102S

bahagian bahagian: 122

Senarai harapan
2N4449
Microsemi Corporation

2N4449

bahagian bahagian: 4940

Jenis Transistor: NPN, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 400nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V,

Senarai harapan
2N2814
Microsemi Corporation

2N2814

bahagian bahagian: 152

Senarai harapan
2N5428
Microsemi Corporation

2N5428

bahagian bahagian: 114

Senarai harapan
2N3635L
Microsemi Corporation

2N3635L

bahagian bahagian: 5555

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 140V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V,

Senarai harapan
2N697
Microsemi Corporation

2N697

bahagian bahagian: 137

Senarai harapan
2N5416UA
Microsemi Corporation

2N5416UA

bahagian bahagian: 161

Senarai harapan
2N697S
Microsemi Corporation

2N697S

bahagian bahagian: 168

Senarai harapan
2N5241
Microsemi Corporation

2N5241

bahagian bahagian: 140

Senarai harapan
2N2895
Microsemi Corporation

2N2895

bahagian bahagian: 77

Senarai harapan
2N5151L
Microsemi Corporation

2N5151L

bahagian bahagian: 124

Senarai harapan
2N5238S
Microsemi Corporation

2N5238S

bahagian bahagian: 115

Senarai harapan
2N3725UB
Microsemi Corporation

2N3725UB

bahagian bahagian: 3202

Senarai harapan
2N5785
Microsemi Corporation

2N5785

bahagian bahagian: 87

Senarai harapan
2N5664
Microsemi Corporation

2N5664

bahagian bahagian: 93

Senarai harapan
2N3507U4
Microsemi Corporation

2N3507U4

bahagian bahagian: 120

Senarai harapan
2N6352
Microsemi Corporation

2N6352

bahagian bahagian: 110

Senarai harapan
2N5683
Microsemi Corporation

2N5683

bahagian bahagian: 78

Senarai harapan
2N5582
Microsemi Corporation

2N5582

bahagian bahagian: 5051

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Senarai harapan
2N6648
Microsemi Corporation

2N6648

bahagian bahagian: 130

Senarai harapan
2N6353
Microsemi Corporation

2N6353

bahagian bahagian: 172

Senarai harapan
2N3743
Microsemi Corporation

2N3743

bahagian bahagian: 101

Senarai harapan
2N6278
Microsemi Corporation

2N6278

bahagian bahagian: 154

Senarai harapan
2N1479
Microsemi Corporation

2N1479

bahagian bahagian: 141

Senarai harapan
2N4910
Microsemi Corporation

2N4910

bahagian bahagian: 174

Senarai harapan
2N5238
Microsemi Corporation

2N5238

bahagian bahagian: 140

Senarai harapan
2N2896
Microsemi Corporation

2N2896

bahagian bahagian: 140

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 90V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 15mA, 150mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V,

Senarai harapan
2N5954
Microsemi Corporation

2N5954

bahagian bahagian: 162

Senarai harapan
2N4233A
Microsemi Corporation

2N4233A

bahagian bahagian: 101

Senarai harapan
2N6233
Microsemi Corporation

2N6233

bahagian bahagian: 85

Senarai harapan
2N4900
Microsemi Corporation

2N4900

bahagian bahagian: 122

Senarai harapan