Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 32

BUK7Y9R9-80EX

bahagian bahagian: 141706

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 89A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 5A, 10V,

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Nexperia USA Inc.

BUK7D25-40EX

bahagian bahagian: 9923

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8A, 10V,

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Nexperia USA Inc.

BUK7905-40AIE,127

bahagian bahagian: 28752

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 50A, 10V,

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Nexperia USA Inc.

BUK6228-55C,118

bahagian bahagian: 183525

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 10A, 10V,

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Nexperia USA Inc.

BUK9610-100B,118

bahagian bahagian: 61512

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 9.7 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK6607-55C,118

bahagian bahagian: 123826

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK962R8-60E,118

bahagian bahagian: 53057

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7635-55A,118

bahagian bahagian: 157535

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 20A, 10V,

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Nexperia USA Inc.

BUK6C2R1-55C,118

bahagian bahagian: 46841

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 228A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 90A, 10V,

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Nexperia USA Inc.

BUK969R0-60E,118

bahagian bahagian: 102324

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 20A, 10V,

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Nexperia USA Inc.

BUK9Y30-75B/C2,115

bahagian bahagian: 1130

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 15A, 10V,

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Nexperia USA Inc.

BUK9Y19-55B/C2,115

bahagian bahagian: 1164

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 17.3 mOhm @ 20A, 10V,

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Nexperia USA Inc.

BSP110,115

bahagian bahagian: 1086

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 520mA (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 150mA, 5V,

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Nexperia USA Inc.

BUK6E2R0-30C,127

bahagian bahagian: 31040

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK6507-75C,127

bahagian bahagian: 1003

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.6 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7607-30B,118

bahagian bahagian: 156921

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK725R0-40C,118

bahagian bahagian: 145924

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK724R5-30C,118

bahagian bahagian: 145943

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK763R6-40C,118

bahagian bahagian: 1007

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.6 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK754R0-40C,127

bahagian bahagian: 1037

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK9E04-40A,127

bahagian bahagian: 80909

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.3V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7610-100B,118

bahagian bahagian: 61580

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7611-55A,118

bahagian bahagian: 106351

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7620-100A,118

bahagian bahagian: 81957

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK9620-55A,118

bahagian bahagian: 145622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK764R0-55B,118

bahagian bahagian: 61594

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK664R4-55C,118

bahagian bahagian: 42132

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7613-100E,118

bahagian bahagian: 81658

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 20A, 10V,

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Nexperia USA Inc.

BUK9611-80E,118

bahagian bahagian: 81701

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 20A, 10V,

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Nexperia USA Inc.

BUK662R7-55C,118

bahagian bahagian: 55838

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.7 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7613-60E,118

bahagian bahagian: 122570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 58A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V,

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Nexperia USA Inc.

BUK7635-100A,118

bahagian bahagian: 104642

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 41A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7609-75A,118

bahagian bahagian: 62207

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK765R2-40B,118

bahagian bahagian: 95452

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK961R6-40E,118

bahagian bahagian: 47700

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK661R9-40C,118

bahagian bahagian: 55848

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.9 mOhm @ 25A, 10V,

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