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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
BUK761R7-40E,118
Nexperia USA Inc.

BUK761R7-40E,118

bahagian bahagian: 64866

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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BUK7880-55/CUF
Nexperia USA Inc.

BUK7880-55/CUF

bahagian bahagian: 137946

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 5A, 10V,

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BUK7107-55ATE,118
Nexperia USA Inc.

BUK7107-55ATE,118

bahagian bahagian: 8606

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 50A, 10V,

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BUK661R6-30C,118
Nexperia USA Inc.

BUK661R6-30C,118

bahagian bahagian: 63697

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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BUK9628-55A,118
Nexperia USA Inc.

BUK9628-55A,118

bahagian bahagian: 154200

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 42A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 15A, 10V,

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BUK6D43-60EX
Nexperia USA Inc.

BUK6D43-60EX

bahagian bahagian: 24356

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 5A, 10V,

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BUK7Y18-75B,115
Nexperia USA Inc.

BUK7Y18-75B,115

bahagian bahagian: 197618

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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BUK6D120-60PX
Nexperia USA Inc.

BUK6D120-60PX

bahagian bahagian: 24343

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 10V,

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BUK9840-55/CUX
Nexperia USA Inc.

BUK9840-55/CUX

bahagian bahagian: 139579

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), 10.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 5A, 5V,

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BUK9Y104-100B,115
Nexperia USA Inc.

BUK9Y104-100B,115

bahagian bahagian: 164195

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 99 mOhm @ 5A, 10V,

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BUK9M14-40EX
Nexperia USA Inc.

BUK9M14-40EX

bahagian bahagian: 179377

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 15A, 10V,

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BUK964R8-60E,118
Nexperia USA Inc.

BUK964R8-60E,118

bahagian bahagian: 72266

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 25A, 10V,

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BUK765R0-100E,118
Nexperia USA Inc.

BUK765R0-100E,118

bahagian bahagian: 47693

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 25A, 10V,

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BUK6610-75C,118
Nexperia USA Inc.

BUK6610-75C,118

bahagian bahagian: 112806

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 78A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

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BUK763R9-60E,118
Nexperia USA Inc.

BUK763R9-60E,118

bahagian bahagian: 64641

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 25A, 10V,

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BUK9230-100B,118
Nexperia USA Inc.

BUK9230-100B,118

bahagian bahagian: 59587

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 25A, 10V,

Senarai harapan
BUK9275-100A,118
Nexperia USA Inc.

BUK9275-100A,118

bahagian bahagian: 172654

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 10A, 10V,

Senarai harapan
BUK6217-55C,118
Nexperia USA Inc.

BUK6217-55C,118

bahagian bahagian: 159020

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 12A, 10V,

Senarai harapan
BUK7219-55A,118
Nexperia USA Inc.

BUK7219-55A,118

bahagian bahagian: 184579

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 25A, 10V,

Senarai harapan
BUK9215-55A,118
Nexperia USA Inc.

BUK9215-55A,118

bahagian bahagian: 184578

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13.6 mOhm @ 25A, 10V,

Senarai harapan
BUK9240-100A,118
Nexperia USA Inc.

BUK9240-100A,118

bahagian bahagian: 151749

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 38.6 mOhm @ 25A, 10V,

Senarai harapan
BUK9207-30B,118
Nexperia USA Inc.

BUK9207-30B,118

bahagian bahagian: 152477

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 25A, 10V,

Senarai harapan
BUK6209-30C,118
Nexperia USA Inc.

BUK6209-30C,118

bahagian bahagian: 102855

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.8 mOhm @ 12A, 10V,

Senarai harapan
BUK96180-100A,118
Nexperia USA Inc.

BUK96180-100A,118

bahagian bahagian: 147944

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 173 mOhm @ 5A, 10V,

Senarai harapan
BUK9614-60E,118
Nexperia USA Inc.

BUK9614-60E,118

bahagian bahagian: 122604

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 12.8 mOhm @ 15A, 10V,

Senarai harapan
BUK7Y4R4-40EX
Nexperia USA Inc.

BUK7Y4R4-40EX

bahagian bahagian: 176281

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 25A, 10V,

Senarai harapan
BUK7Y7R8-80EX
Nexperia USA Inc.

BUK7Y7R8-80EX

bahagian bahagian: 118582

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.8 mOhm @ 25A, 10V,

Senarai harapan
BUK9Y6R0-60E,115
Nexperia USA Inc.

BUK9Y6R0-60E,115

bahagian bahagian: 141695

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 25A, 10V,

Senarai harapan
BUK7E2R6-60E,127
Nexperia USA Inc.

BUK7E2R6-60E,127

bahagian bahagian: 29265

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

Senarai harapan
BUK9Y19-75B,115
Nexperia USA Inc.

BUK9Y19-75B,115

bahagian bahagian: 140943

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 20A, 10V,

Senarai harapan
BUK765R3-40E,118
Nexperia USA Inc.

BUK765R3-40E,118

bahagian bahagian: 141625

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 25A, 10V,

Senarai harapan
BUK9209-40B,118
Nexperia USA Inc.

BUK9209-40B,118

bahagian bahagian: 149318

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 10V,

Senarai harapan
BUK7210-55B,118
Nexperia USA Inc.

BUK7210-55B,118

bahagian bahagian: 152495

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

Senarai harapan
BUK9219-55A,118
Nexperia USA Inc.

BUK9219-55A,118

bahagian bahagian: 172078

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17.6 mOhm @ 25A, 10V,

Senarai harapan
BUK7222-55A,118
Nexperia USA Inc.

BUK7222-55A,118

bahagian bahagian: 187022

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 25A, 10V,

Senarai harapan
BUK663R2-40C,118
Nexperia USA Inc.

BUK663R2-40C,118

bahagian bahagian: 91480

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 25A, 10V,

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