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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
FQPF20N06L
ON Semiconductor

FQPF20N06L

bahagian bahagian: 57269

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 7.85A, 10V,

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NTMFS4H01NFT3G
ON Semiconductor

NTMFS4H01NFT3G

bahagian bahagian: 22706

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Ta), 334A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.7 mOhm @ 30A, 10V,

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FDD050N03B
ON Semiconductor

FDD050N03B

bahagian bahagian: 199639

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 25A, 10V,

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FDB2552
ON Semiconductor

FDB2552

bahagian bahagian: 57289

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 16A, 10V,

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MCH3478-TL-W-Z
ON Semiconductor

MCH3478-TL-W-Z

bahagian bahagian: 196866

Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V,

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MCH3479-TL-W
ON Semiconductor

MCH3479-TL-W

bahagian bahagian: 114695

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V,

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FDD6630A
ON Semiconductor

FDD6630A

bahagian bahagian: 167158

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 7.6A, 10V,

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FDB070AN06A0
ON Semiconductor

FDB070AN06A0

bahagian bahagian: 59371

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 80A, 10V,

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NVATS5A112PLZT4G
ON Semiconductor

NVATS5A112PLZT4G

bahagian bahagian: 163879

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 13A, 10V,

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ECH8315-TL-H
ON Semiconductor

ECH8315-TL-H

bahagian bahagian: 175911

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3.5A, 10V,

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FDPF190N15A
ON Semiconductor

FDPF190N15A

bahagian bahagian: 29084

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 27.4A, 10V,

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NTP6410ANG
ON Semiconductor

NTP6410ANG

bahagian bahagian: 34781

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 76A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 76A, 10V,

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FQB6N80TM
ON Semiconductor

FQB6N80TM

bahagian bahagian: 27873

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.95 Ohm @ 2.9A, 10V,

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FDB035N10A
ON Semiconductor

FDB035N10A

bahagian bahagian: 24746

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 75A, 10V,

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MCH3383-TL-W
ON Semiconductor

MCH3383-TL-W

bahagian bahagian: 186098

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0.9V, 2.5V, Rds On (Maks) @ Id, Vgs: 69 mOhm @ 1.5A, 2.5V,

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FQD19N10TM
ON Semiconductor

FQD19N10TM

bahagian bahagian: 190200

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 7.8A, 10V,

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FQB33N10LTM
ON Semiconductor

FQB33N10LTM

bahagian bahagian: 95450

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 16.5A, 10V,

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HUF75639S3ST
ON Semiconductor

HUF75639S3ST

bahagian bahagian: 54485

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 56A, 10V,

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FQD8P10TM-F085
ON Semiconductor

FQD8P10TM-F085

bahagian bahagian: 138

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 530 mOhm @ 3.3A, 10V,

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FDP047N08-F102
ON Semiconductor

FDP047N08-F102

bahagian bahagian: 114

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 164A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.7 Ohm @ 80A, 10V,

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CPH6443-TL-W
ON Semiconductor

CPH6443-TL-W

bahagian bahagian: 103186

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 3A, 10V,

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MCH3374-TL-E
ON Semiconductor

MCH3374-TL-E

bahagian bahagian: 174170

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V,

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CPH6444-TL-W
ON Semiconductor

CPH6444-TL-W

bahagian bahagian: 190869

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 2A, 10V,

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FQD4P25TM-WS
ON Semiconductor

FQD4P25TM-WS

bahagian bahagian: 76

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 1.55A, 10V,

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FQD7N20LTM
ON Semiconductor

FQD7N20LTM

bahagian bahagian: 186597

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 2.75A, 10V,

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NTNS3190NZT5G
ON Semiconductor

NTNS3190NZT5G

bahagian bahagian: 188849

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 224mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V,

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NCV8440ASTT3G
ON Semiconductor

NCV8440ASTT3G

bahagian bahagian: 158511

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 59V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.5V, 10V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 2.6A, 10V,

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FQD5N20LTM
ON Semiconductor

FQD5N20LTM

bahagian bahagian: 197937

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V,

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NTMFS4H01NFT1G
ON Semiconductor

NTMFS4H01NFT1G

bahagian bahagian: 20737

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Ta), 334A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.7 mOhm @ 30A, 10V,

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NVMFS5A140PLZWFT1G
ON Semiconductor

NVMFS5A140PLZWFT1G

bahagian bahagian: 112

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), 140A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

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MCH6431-TL-W
ON Semiconductor

MCH6431-TL-W

bahagian bahagian: 146667

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2.5A, 10V,

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FDD4243-F085
ON Semiconductor

FDD4243-F085

bahagian bahagian: 73

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A (Ta), 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 6.7A, 10V,

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FDS4465-F085
ON Semiconductor

FDS4465-F085

bahagian bahagian: 119

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 13.5A, 4.5V,

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FQP70N10
ON Semiconductor

FQP70N10

bahagian bahagian: 30568

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 57A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 28.5A, 10V,

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NVD5C478NLT4G
ON Semiconductor

NVD5C478NLT4G

bahagian bahagian: 100

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.7 mOhm @ 15A, 10V,

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NTGS3446T1G
ON Semiconductor

NTGS3446T1G

bahagian bahagian: 184967

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.1A, 4.5V,

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