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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
NDS0605
ON Semiconductor

NDS0605

bahagian bahagian: 193296

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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NVD5C454NLT4G
ON Semiconductor

NVD5C454NLT4G

bahagian bahagian: 231

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), 84A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 40A, 10V,

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FDMS86263P
ON Semiconductor

FDMS86263P

bahagian bahagian: 63223

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Ta), 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4.4A, 10V,

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FDN359BN
ON Semiconductor

FDN359BN

bahagian bahagian: 238

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 2.7A, 10V,

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FDC86244
ON Semiconductor

FDC86244

bahagian bahagian: 145074

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 144 mOhm @ 2.3A, 10V,

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FDP023N08B-F102
ON Semiconductor

FDP023N08B-F102

bahagian bahagian: 208

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.35 mOhm @ 75A, 10V,

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FDMT80080DC
ON Semiconductor

FDMT80080DC

bahagian bahagian: 26898

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Ta), 254A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 8V, 10V, Rds On (Maks) @ Id, Vgs: 1.35 mOhm @ 36A, 10V,

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FDMC610P
ON Semiconductor

FDMC610P

bahagian bahagian: 82188

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 22A, 4.5V,

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FDMC86265P
ON Semiconductor

FDMC86265P

bahagian bahagian: 158516

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), 1.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 1A, 10V,

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CPH6341-TL-W
ON Semiconductor

CPH6341-TL-W

bahagian bahagian: 155297

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 3A, 10V,

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FDMS8023S
ON Semiconductor

FDMS8023S

bahagian bahagian: 156269

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Ta), 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 26A, 10V,

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FDMS003N08C
ON Semiconductor

FDMS003N08C

bahagian bahagian: 244

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 147A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 3.1 mOhm @ 56A, 10V,

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NDS332P
ON Semiconductor

NDS332P

bahagian bahagian: 165283

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.7V, 4.5V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.1A, 4.5V,

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SSN1N45BTA
ON Semiconductor

SSN1N45BTA

bahagian bahagian: 131023

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V,

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FDN357N
ON Semiconductor

FDN357N

bahagian bahagian: 163365

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 2.2A, 10V,

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FDMC86248
ON Semiconductor

FDMC86248

bahagian bahagian: 74721

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.4A, 10V,

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FDMC8622
ON Semiconductor

FDMC8622

bahagian bahagian: 118959

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4A, 10V,

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FDMS86101DC
ON Semiconductor

FDMS86101DC

bahagian bahagian: 41866

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.5A (Ta), 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 14.5A, 10V,

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FDC608PZ
ON Semiconductor

FDC608PZ

bahagian bahagian: 128970

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V,

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FQPF32N20C
ON Semiconductor

FQPF32N20C

bahagian bahagian: 25352

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 82 mOhm @ 14A, 10V,

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FDC30N20DZ
ON Semiconductor

FDC30N20DZ

bahagian bahagian: 108918

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.6A, 10V,

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FDT86256
ON Semiconductor

FDT86256

bahagian bahagian: 158592

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A (Ta), 3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 845 mOhm @ 1.2A, 10V,

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FDWS9508L-F085
ON Semiconductor

FDWS9508L-F085

bahagian bahagian: 235

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 80A, 10V,

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NTMFS4H02NT3G
ON Semiconductor

NTMFS4H02NT3G

bahagian bahagian: 37153

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Ta), 193A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 30A, 10V,

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FDWS9509L-F085
ON Semiconductor

FDWS9509L-F085

bahagian bahagian: 215

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 65A, 10V,

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FDT86113LZ
ON Semiconductor

FDT86113LZ

bahagian bahagian: 118545

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.3A, 10V,

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NTMS4920NR2G
ON Semiconductor

NTMS4920NR2G

bahagian bahagian: 159124

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 7.5A, 10V,

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FDC2512
ON Semiconductor

FDC2512

bahagian bahagian: 110766

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 425 mOhm @ 1.4A, 10V,

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FCH76N60N
ON Semiconductor

FCH76N60N

bahagian bahagian: 2938

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 76A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 38A, 10V,

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FQT5P10TF
ON Semiconductor

FQT5P10TF

bahagian bahagian: 168533

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V,

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FDBL9401-F085
ON Semiconductor

FDBL9401-F085

bahagian bahagian: 215

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 0.65 mOhm @ 80A, 10V,

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FDMC8360L
ON Semiconductor

FDMC8360L

bahagian bahagian: 79547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.1 mOhm @ 27A, 10V,

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FDC3535
ON Semiconductor

FDC3535

bahagian bahagian: 193435

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 183 mOhm @ 2.1A, 10V,

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FDN8601
ON Semiconductor

FDN8601

bahagian bahagian: 190215

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 109 mOhm @ 1.5A, 10V,

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FDC602P
ON Semiconductor

FDC602P

bahagian bahagian: 124840

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V,

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FDMC86116LZ
ON Semiconductor

FDMC86116LZ

bahagian bahagian: 185556

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A (Ta), 7.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 103 mOhm @ 3.3A, 10V,

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