Transistor - FET, MOSFET - Bujang

5HN01C-TB-EX

bahagian bahagian: 2210

5HP01M-TL-H

bahagian bahagian: 110639

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 22 Ohm @ 40mA, 10V,

5LN01M-TL-H

bahagian bahagian: 114622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5HP01S-TL-E

bahagian bahagian: 1973

5HP01SS-TL-E

bahagian bahagian: 142336

5HP01SS-TL-H

bahagian bahagian: 108914

5HP01C-TB-H

bahagian bahagian: 157648

5HP01M-TL-E

bahagian bahagian: 1963

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 22 Ohm @ 40mA, 10V,

5HN01S-TL-E

bahagian bahagian: 1979

5HP01C-TB-E

bahagian bahagian: 6246

5HN01SS-TL-H

bahagian bahagian: 146833

5HN01SS-TL-E

bahagian bahagian: 154338

5HN01M-TL-E

bahagian bahagian: 1932

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V,

5HN01M-TL-H

bahagian bahagian: 102036

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V,

5HN01C-TB-H

bahagian bahagian: 147399

5HN01C-TB-E

bahagian bahagian: 176441

5LN01SP-AC

bahagian bahagian: 6260

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LN01C-TB-E

bahagian bahagian: 128226

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LP01M-TL-HX

bahagian bahagian: 1826

5LP01SP

bahagian bahagian: 1894

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LP01M-TL-E

bahagian bahagian: 6268

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LN01SP

bahagian bahagian: 1839

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LN01M-TL-E

bahagian bahagian: 1842

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LP01SS-TL-H

bahagian bahagian: 6223

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LP01SS-TL-E

bahagian bahagian: 1441

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LP01S-TL-E

bahagian bahagian: 1507

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LP01C-TB-H

bahagian bahagian: 174960

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LP01C-TB-E

bahagian bahagian: 128915

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5LN01SS-TL-H

bahagian bahagian: 1448

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LN01C-TB-H

bahagian bahagian: 6222

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LN01S-TL-E

bahagian bahagian: 1469

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LN01SS-TL-E

bahagian bahagian: 109264

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5LP01M-TL-H

bahagian bahagian: 185339

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

5X49_BG7002B

bahagian bahagian: 646

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V,

5LP01SP-AC

bahagian bahagian: 9476

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

6HP04MH-TL-W

bahagian bahagian: 133677

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 Ohm @ 190mA, 10V,