Transistor - FET, MOSFET - Bujang

NVMFS5C468NLWFT3G

NVMFS5C468NLWFT3G

bahagian bahagian: 162536

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10.3 mOhm @ 20A, 10V,

Senarai harapan
NTMFS4C56NT1G

NTMFS4C56NT1G

bahagian bahagian: 123350

Senarai harapan
MCH6431-P-TL-H

MCH6431-P-TL-H

bahagian bahagian: 5649

Senarai harapan
NDD01N60T4G

NDD01N60T4G

bahagian bahagian: 1829

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V,

Senarai harapan
FDBL86561-F085

FDBL86561-F085

bahagian bahagian: 8688

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.1 mOhm @ 80A, 10V,

Senarai harapan
NTLUS3A39PZCTAG

NTLUS3A39PZCTAG

bahagian bahagian: 2065

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 4A, 4.5V,

Senarai harapan
FDME430NT

FDME430NT

bahagian bahagian: 1781

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6A, 4.5V,

Senarai harapan
NVMFS5C442NLT3G

NVMFS5C442NLT3G

bahagian bahagian: 158927

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), 127A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 50A, 10V,

Senarai harapan
FDB8160-F085

FDB8160-F085

bahagian bahagian: 1780

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.8 mOhm @ 80A, 10V,

Senarai harapan
NTTFS4C53NTAG

NTTFS4C53NTAG

bahagian bahagian: 167105

Senarai harapan
NTF2955T1G

NTF2955T1G

bahagian bahagian: 189675

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 2.4A, 10V,

Senarai harapan
FDP3632

FDP3632

bahagian bahagian: 22509

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 80A, 10V,

Senarai harapan
NDD02N40T4G

NDD02N40T4G

bahagian bahagian: 108195

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V,

Senarai harapan
NVMFS5C456NLT3G

NVMFS5C456NLT3G

bahagian bahagian: 167536

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 20A, 10V,

Senarai harapan
NVMFS5C423NLWFT1G

NVMFS5C423NLWFT1G

bahagian bahagian: 121213

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2 mOhm @ 50A, 10V,

Senarai harapan
EMH1405-P-TL-H

EMH1405-P-TL-H

bahagian bahagian: 1858

Senarai harapan
NTMFS4C58NT1G

NTMFS4C58NT1G

bahagian bahagian: 130544

Senarai harapan
NVMFS5826NLWFT3G

NVMFS5826NLWFT3G

bahagian bahagian: 173896

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 10A, 10V,

Senarai harapan
NVMFS5C450NWFT1G

NVMFS5C450NWFT1G

bahagian bahagian: 147975

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 50A, 10V,

Senarai harapan
NVMFS6B05NT3G

NVMFS6B05NT3G

bahagian bahagian: 37222

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 20A, 10V,

Senarai harapan
SCH1433-TL-W

SCH1433-TL-W

bahagian bahagian: 2005

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V,

Senarai harapan
NVMFS6B03NWFT1G

NVMFS6B03NWFT1G

bahagian bahagian: 18925

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Senarai harapan
NVMFS5C646NLT1G

NVMFS5C646NLT1G

bahagian bahagian: 96678

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), 93A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

Senarai harapan
NVMFS5C460NLT3G

NVMFS5C460NLT3G

bahagian bahagian: 182010

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 35A, 10V,

Senarai harapan
NTMFS4C10NT1G-001

NTMFS4C10NT1G-001

bahagian bahagian: 1995

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A (Ta), 46A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.95 mOhm @ 30A, 10V,

Senarai harapan
NDPL180N10BG

NDPL180N10BG

bahagian bahagian: 1912

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, 15V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 15V, 50A,

Senarai harapan
NVMFS5C670NLWFT1G

NVMFS5C670NLWFT1G

bahagian bahagian: 109908

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), 71A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.1 mOhm @ 35A, 10V,

Senarai harapan
NDBA100N10BT4H

NDBA100N10BT4H

bahagian bahagian: 1986

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, 15V, Rds On (Maks) @ Id, Vgs: 6.9 mOhm @ 50A, 15V,

Senarai harapan
NTTFS4C56NTWG

NTTFS4C56NTWG

bahagian bahagian: 149720

Senarai harapan
NVMFS5C673NLT1G

NVMFS5C673NLT1G

bahagian bahagian: 157290

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.2 mOhm @ 25A, 10V,

Senarai harapan
NTMFS4C53NT3G

NTMFS4C53NT3G

bahagian bahagian: 178830

Senarai harapan
HUFA76645S3ST-F085

HUFA76645S3ST-F085

bahagian bahagian: 1829

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 75A, 10V,

Senarai harapan
NVMFS6B14NT3G

NVMFS6B14NT3G

bahagian bahagian: 93186

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 20A, 10V,

Senarai harapan
CPH3455-TL-W

CPH3455-TL-W

bahagian bahagian: 152633

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 104 mOhm @ 1.5A, 10V,

Senarai harapan
MCH6320-TL-W

MCH6320-TL-W

bahagian bahagian: 2007

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V,

Senarai harapan
NVMFS5C442NT1G

NVMFS5C442NT1G

bahagian bahagian: 140961

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 50A, 10V,

Senarai harapan