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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
NTMFS4834NT3G
ON Semiconductor

NTMFS4834NT3G

bahagian bahagian: 6124

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), 130A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 30A, 10V,

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FDMS8662
ON Semiconductor

FDMS8662

bahagian bahagian: 497

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2 mOhm @ 28A, 10V,

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HUFA76609D3ST
ON Semiconductor

HUFA76609D3ST

bahagian bahagian: 6066

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 10A, 10V,

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FDFMA2P857
ON Semiconductor

FDFMA2P857

bahagian bahagian: 395

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 4.5V,

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NTD4813NH-1G
ON Semiconductor

NTD4813NH-1G

bahagian bahagian: 502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 30A, 10V,

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NTMFS4701NT1G
ON Semiconductor

NTMFS4701NT1G

bahagian bahagian: 298

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 20A, 10V,

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NTD80N02
ON Semiconductor

NTD80N02

bahagian bahagian: 380

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 80A, 10V,

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NTD4813N-1G
ON Semiconductor

NTD4813N-1G

bahagian bahagian: 467

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 30A, 10V,

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NTR1P02T3G
ON Semiconductor

NTR1P02T3G

bahagian bahagian: 389

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.5A, 10V,

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IRLS640A
ON Semiconductor

IRLS640A

bahagian bahagian: 39202

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 4.9A, 5V,

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NTD4810N-35G
ON Semiconductor

NTD4810N-35G

bahagian bahagian: 363

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 30A, 10V,

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FDI8442
ON Semiconductor

FDI8442

bahagian bahagian: 485

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.9 mOhm @ 80A, 10V,

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NTD4302G
ON Semiconductor

NTD4302G

bahagian bahagian: 317

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A (Ta), 68A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 20A, 10V,

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NTD4804NA-1G
ON Semiconductor

NTD4804NA-1G

bahagian bahagian: 489

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.5A (Ta), 124A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 30A, 10V,

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NTD60N02R
ON Semiconductor

NTD60N02R

bahagian bahagian: 337

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A (Ta), 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10.5 mOhm @ 20A, 10V,

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FDMS8670AS
ON Semiconductor

FDMS8670AS

bahagian bahagian: 484

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), 42A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 23A, 10V,

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FDZ4670S
ON Semiconductor

FDZ4670S

bahagian bahagian: 492

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 25A, 10V,

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NTD3808N-1G
ON Semiconductor

NTD3808N-1G

bahagian bahagian: 577

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 76A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 15A, 10V,

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NTP75N03-6G
ON Semiconductor

NTP75N03-6G

bahagian bahagian: 369

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V,

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NTMFS4744NT3G
ON Semiconductor

NTMFS4744NT3G

bahagian bahagian: 505

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 7.6 mOhm @ 30A, 10V,

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NTD50N03RT4G
ON Semiconductor

NTD50N03RT4G

bahagian bahagian: 358

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.8A (Ta), 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 11.5V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 30A, 11.5V,

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FDZ7296
ON Semiconductor

FDZ7296

bahagian bahagian: 385

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 11A, 10V,

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NTD32N06LG
ON Semiconductor

NTD32N06LG

bahagian bahagian: 291

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 16A, 5V,

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NTD5406NT4G
ON Semiconductor

NTD5406NT4G

bahagian bahagian: 357

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.2A (Ta), 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 30A, 10V,

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NTLGF3402PT1G
ON Semiconductor

NTLGF3402PT1G

bahagian bahagian: 389

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V,

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FDD6N20TF
ON Semiconductor

FDD6N20TF

bahagian bahagian: 340

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 800 mOhm @ 2.3A, 10V,

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FDFC2P100
ON Semiconductor

FDFC2P100

bahagian bahagian: 330

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 3A, 4.5V,

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NTB5404NT4G
ON Semiconductor

NTB5404NT4G

bahagian bahagian: 482

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 167A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 40A, 10V,

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NTD6600N-001
ON Semiconductor

NTD6600N-001

bahagian bahagian: 300

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 146 mOhm @ 6A, 5V,

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NTR4503NT3
ON Semiconductor

NTR4503NT3

bahagian bahagian: 333

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 2.5A, 10V,

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NTD3813N-1G
ON Semiconductor

NTD3813N-1G

bahagian bahagian: 541

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.6A (Ta), 51A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.75 mOhm @ 15A, 10V,

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NTD78N03T4
ON Semiconductor

NTD78N03T4

bahagian bahagian: 351

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.4A (Ta), 78A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 78A, 10V,

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NTD6600NT4G
ON Semiconductor

NTD6600NT4G

bahagian bahagian: 6049

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 146 mOhm @ 6A, 5V,

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FQB9N50CFTM
ON Semiconductor

FQB9N50CFTM

bahagian bahagian: 338

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 850 mOhm @ 4.5A, 10V,

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NTD65N03RG
ON Semiconductor

NTD65N03RG

bahagian bahagian: 355

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A (Ta), 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.4 mOhm @ 30A, 10V,

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FDP8878
ON Semiconductor

FDP8878

bahagian bahagian: 572

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 40A, 10V,

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