Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Bujang

  • Rumah
  •  
  • Transistor - FET, MOSFET - Bujang
HUFA76639P3
ON Semiconductor

HUFA76639P3

bahagian bahagian: 10013

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 51A, 10V,

Senarai harapan
NTB90N02
ON Semiconductor

NTB90N02

bahagian bahagian: 352

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 90A, 10V,

Senarai harapan
NTTFS3A08PZTWG
ON Semiconductor

NTTFS3A08PZTWG

bahagian bahagian: 143038

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 6.7 mOhm @ 12A, 4.5V,

Senarai harapan
FQB5N80TM
ON Semiconductor

FQB5N80TM

bahagian bahagian: 10058

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.6 Ohm @ 2.4A, 10V,

Senarai harapan
FQB6N70TM
ON Semiconductor

FQB6N70TM

bahagian bahagian: 10037

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V,

Senarai harapan
FDD86102
ON Semiconductor

FDD86102

bahagian bahagian: 113259

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 8A, 10V,

Senarai harapan
FCU7N60TU
ON Semiconductor

FCU7N60TU

bahagian bahagian: 82

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

Senarai harapan
HUFA75332S3ST
ON Semiconductor

HUFA75332S3ST

bahagian bahagian: 10042

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 60A, 10V,

Senarai harapan
MGSF1N03LT3
ON Semiconductor

MGSF1N03LT3

bahagian bahagian: 293

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1.2A, 10V,

Senarai harapan
HUFA76445S3ST
ON Semiconductor

HUFA76445S3ST

bahagian bahagian: 18

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 75A, 10V,

Senarai harapan
NTB75N06G
ON Semiconductor

NTB75N06G

bahagian bahagian: 286

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V,

Senarai harapan
FDU8780
ON Semiconductor

FDU8780

bahagian bahagian: 77

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 35A, 10V,

Senarai harapan
FDU8778
ON Semiconductor

FDU8778

bahagian bahagian: 56

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 35A, 10V,

Senarai harapan
HUFA75639P3
ON Semiconductor

HUFA75639P3

bahagian bahagian: 10071

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 56A, 10V,

Senarai harapan
FQAF58N08
ON Semiconductor

FQAF58N08

bahagian bahagian: 10008

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 22A, 10V,

Senarai harapan
FDS8884
ON Semiconductor

FDS8884

bahagian bahagian: 105463

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 8.5A, 10V,

Senarai harapan
HUFA76443S3ST
ON Semiconductor

HUFA76443S3ST

bahagian bahagian: 40

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 75A, 10V,

Senarai harapan
FQA34N20L
ON Semiconductor

FQA34N20L

bahagian bahagian: 10030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 17A, 10V,

Senarai harapan
FDD6530A
ON Semiconductor

FDD6530A

bahagian bahagian: 167132

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 8A, 4.5V,

Senarai harapan
FQU3N60CTU
ON Semiconductor

FQU3N60CTU

bahagian bahagian: 151

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.4 Ohm @ 1.2A, 10V,

Senarai harapan
NTB52N10G
ON Semiconductor

NTB52N10G

bahagian bahagian: 260

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 52A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 26A, 10V,

Senarai harapan
FDU8796
ON Semiconductor

FDU8796

bahagian bahagian: 51

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.7 mOhm @ 35A, 10V,

Senarai harapan
FQB6N90TM_AM002
ON Semiconductor

FQB6N90TM_AM002

bahagian bahagian: 10018

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.9 Ohm @ 2.9A, 10V,

Senarai harapan
NTTFS5116PLTWG
ON Semiconductor

NTTFS5116PLTWG

bahagian bahagian: 128868

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 6A, 10V,

Senarai harapan
NTB90N02G
ON Semiconductor

NTB90N02G

bahagian bahagian: 332

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 90A, 10V,

Senarai harapan
FDA75N28
ON Semiconductor

FDA75N28

bahagian bahagian: 227

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 280V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 37.5A, 10V,

Senarai harapan
FQAF6N80
ON Semiconductor

FQAF6N80

bahagian bahagian: 10065

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.95 Ohm @ 2.2A, 10V,

Senarai harapan
HUFA75333S3ST
ON Semiconductor

HUFA75333S3ST

bahagian bahagian: 10062

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 66A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 66A, 10V,

Senarai harapan
NVMFS5C673NLAFT3G
ON Semiconductor

NVMFS5C673NLAFT3G

bahagian bahagian: 16520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.2 mOhm @ 25A, 10V,

Senarai harapan
NTD3055-094
ON Semiconductor

NTD3055-094

bahagian bahagian: 336

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 94 mOhm @ 6A, 10V,

Senarai harapan
ISL9N302AP3
ON Semiconductor

ISL9N302AP3

bahagian bahagian: 84

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 75A, 10V,

Senarai harapan
NTA4151PT1
ON Semiconductor

NTA4151PT1

bahagian bahagian: 282

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 760mA (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V,

Senarai harapan
HUFA75339G3
ON Semiconductor

HUFA75339G3

bahagian bahagian: 10042

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 75A, 10V,

Senarai harapan
FDD8580
ON Semiconductor

FDD8580

bahagian bahagian: 125

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 35A, 10V,

Senarai harapan
NTB75N03L09G
ON Semiconductor

NTB75N03L09G

bahagian bahagian: 284

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 37.5A, 5V,

Senarai harapan
FQA9N90C
ON Semiconductor

FQA9N90C

bahagian bahagian: 10070

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V,

Senarai harapan