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Transistor - Bipolar (BJT) - Susunan

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  • Transistor - Bipolar (BJT) - Susunan
NSV40302PDR2G
ON Semiconductor

NSV40302PDR2G

bahagian bahagian: 172467

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 115mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V,

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NSVT3904DXV6T1G
ON Semiconductor

NSVT3904DXV6T1G

bahagian bahagian: 128900

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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FMBA14
ON Semiconductor

FMBA14

bahagian bahagian: 179794

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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NSM4002MR6T1G
ON Semiconductor

NSM4002MR6T1G

bahagian bahagian: 171582

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, 45V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 250 @ 100mA, 1V,

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NSVT45011MW6T3G
ON Semiconductor

NSVT45011MW6T3G

bahagian bahagian: 174696

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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NST30010MXV6T1G
ON Semiconductor

NST30010MXV6T1G

bahagian bahagian: 190901

Jenis Transistor: 2 PNP (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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NST3904DXV6T1G
ON Semiconductor

NST3904DXV6T1G

bahagian bahagian: 101109

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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SHN1B01FDW1T1G
ON Semiconductor

SHN1B01FDW1T1G

bahagian bahagian: 160441

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 2µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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SBC847CDW1T1G
ON Semiconductor

SBC847CDW1T1G

bahagian bahagian: 146654

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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NSVEMT1DXV6T5G
ON Semiconductor

NSVEMT1DXV6T5G

bahagian bahagian: 197370

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500pA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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SBC856BDW1T3G
ON Semiconductor

SBC856BDW1T3G

bahagian bahagian: 108317

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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NSVEMX1DXV6T1G
ON Semiconductor

NSVEMX1DXV6T1G

bahagian bahagian: 103172

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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NST45011MW6T1G
ON Semiconductor

NST45011MW6T1G

bahagian bahagian: 182701

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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CPH5506-TL-E
ON Semiconductor

CPH5506-TL-E

bahagian bahagian: 120064

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 225mV @ 15mA, 750mA / 375mV @ 15mA, 750mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

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SBC846BPDW1T2G
ON Semiconductor

SBC846BPDW1T2G

bahagian bahagian: 175944

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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NST3946DP6T5G
ON Semiconductor

NST3946DP6T5G

bahagian bahagian: 152851

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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CPH5505-TL-E
ON Semiconductor

CPH5505-TL-E

bahagian bahagian: 166597

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 230mV @ 30mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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NSVBC848CDW1T1G
ON Semiconductor

NSVBC848CDW1T1G

bahagian bahagian: 125941

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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NSV40300MDR2G
ON Semiconductor

NSV40300MDR2G

bahagian bahagian: 148007

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 170mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V,

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EMT1DXV6T1
ON Semiconductor

EMT1DXV6T1

bahagian bahagian: 4480

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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NST847BDP6T5G
ON Semiconductor

NST847BDP6T5G

bahagian bahagian: 165488

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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NST65010MW6T1G
ON Semiconductor

NST65010MW6T1G

bahagian bahagian: 196459

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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NST847BPDP6T5G
ON Semiconductor

NST847BPDP6T5G

bahagian bahagian: 170917

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V,

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SBC847BPDW1T1G
ON Semiconductor

SBC847BPDW1T1G

bahagian bahagian: 147868

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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FMB5551
ON Semiconductor

FMB5551

bahagian bahagian: 161037

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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NST3946DXV6T1
ON Semiconductor

NST3946DXV6T1

bahagian bahagian: 4567

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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EMT1DXV6T1G
ON Semiconductor

EMT1DXV6T1G

bahagian bahagian: 161432

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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FMB3946
ON Semiconductor

FMB3946

bahagian bahagian: 109471

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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MBT6429DW1T1
ON Semiconductor

MBT6429DW1T1

bahagian bahagian: 4478

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V,

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ECH8502-TL-H
ON Semiconductor

ECH8502-TL-H

bahagian bahagian: 196927

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, 50V, Ketepuan Vce (Maks) @ Ib, Ic: 120mV @ 125mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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ECH8501-TL-H
ON Semiconductor

ECH8501-TL-H

bahagian bahagian: 192899

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 110mV @ 125mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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FMB2907A
ON Semiconductor

FMB2907A

bahagian bahagian: 153935

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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CPH5541-TL-E
ON Semiconductor

CPH5541-TL-E

bahagian bahagian: 131817

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 700mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, 30V, Ketepuan Vce (Maks) @ Ib, Ic: 190mV @ 10mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V,

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NSVT3946DP6T5G
ON Semiconductor

NSVT3946DP6T5G

bahagian bahagian: 194061

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V,

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EMX2DXV6T5G
ON Semiconductor

EMX2DXV6T5G

bahagian bahagian: 131066

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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NST65011MW6T1G
ON Semiconductor

NST65011MW6T1G

bahagian bahagian: 154437

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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